Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2008
• Hauptverfasser: Yodgorova, D.M., Karimov, A.V., Giyasova, F.A., Karimova, D.A.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118677
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base / D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, D.A. Karimova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 75-78. — Бібліогр.: 8 назв. — англ.

The results of research of photoelectric phenomena in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure are presented. The photo-voltaic effect observable in a wide range of the spectrum (0.4-2 µm) is explained by different signs of the photo EMF created by the separation of photocarriers in the energy barrier and from the levels of intrinsic defects as well as deep impurities of oxygen in the quasineutral base. A mechanism of photosensitivity of thin base structures with Schottky-Mott’s barrier under photovoltaic conditions is offered.