Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base
The results of research of photoelectric phenomena in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure are presented. The photo-voltaic effect observable in a wide range of the spectrum (0.4-2 µm) is explained by different signs of the photo EMF created by the separation of photocarriers in t...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2008 |
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| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118677 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base / D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, D.A. Karimova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 75-78. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118677 |
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Yodgorova, D.M. Karimov, A.V. Giyasova, F.A. Karimova, D.A. 2017-05-30T19:24:11Z 2017-05-30T19:24:11Z 2008 Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base / D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, D.A. Karimova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 75-78. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 42.79.Pw, 68.55.Ac https://nasplib.isofts.kiev.ua/handle/123456789/118677 The results of research of photoelectric phenomena in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure are presented. The photo-voltaic effect observable in a wide range of the spectrum (0.4-2 µm) is explained by different signs of the photo EMF created by the separation of photocarriers in the energy barrier and from the levels of intrinsic defects as well as deep impurities of oxygen in the quasineutral base. A mechanism of photosensitivity of thin base structures with Schottky-Mott’s barrier under photovoltaic conditions is offered. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
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| title |
Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base |
| spellingShingle |
Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base Yodgorova, D.M. Karimov, A.V. Giyasova, F.A. Karimova, D.A. |
| title_short |
Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base |
| title_full |
Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base |
| title_fullStr |
Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base |
| title_full_unstemmed |
Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base |
| title_sort |
research of the photo-voltaic effect in the two-base ag-n⁰algaas-n⁺gaas-n⁰gainas-au structure with various thicknesses of a base |
| author |
Yodgorova, D.M. Karimov, A.V. Giyasova, F.A. Karimova, D.A. |
| author_facet |
Yodgorova, D.M. Karimov, A.V. Giyasova, F.A. Karimova, D.A. |
| publishDate |
2008 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The results of research of photoelectric phenomena in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure are presented. The photo-voltaic effect
observable in a wide range of the spectrum (0.4-2 µm) is explained by different signs of
the photo EMF created by the separation of photocarriers in the energy barrier and from
the levels of intrinsic defects as well as deep impurities of oxygen in the quasineutral
base. A mechanism of photosensitivity of thin base structures with Schottky-Mott’s
barrier under photovoltaic conditions is offered.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118677 |
| citation_txt |
Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base / D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, D.A. Karimova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 75-78. — Бібліогр.: 8 назв. — англ. |
| work_keys_str_mv |
AT yodgorovadm researchofthephotovoltaiceffectinthetwobaseagn0algaasngaasn0gainasaustructurewithvariousthicknessesofabase AT karimovav researchofthephotovoltaiceffectinthetwobaseagn0algaasngaasn0gainasaustructurewithvariousthicknessesofabase AT giyasovafa researchofthephotovoltaiceffectinthetwobaseagn0algaasngaasn0gainasaustructurewithvariousthicknessesofabase AT karimovada researchofthephotovoltaiceffectinthetwobaseagn0algaasngaasn0gainasaustructurewithvariousthicknessesofabase |
| first_indexed |
2025-12-07T15:16:56Z |
| last_indexed |
2025-12-07T15:16:56Z |
| _version_ |
1850863115843928064 |