Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base
The results of research of photoelectric phenomena in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure are presented. The photo-voltaic effect
 observable in a wide range of the spectrum (0.4-2 µm) is explained by different signs of
 the photo EMF created by the separation of ph...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2008 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118677 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base / D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, D.A. Karimova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 75-78. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862665304066228224 |
|---|---|
| author | Yodgorova, D.M. Karimov, A.V. Giyasova, F.A. Karimova, D.A. |
| author_facet | Yodgorova, D.M. Karimov, A.V. Giyasova, F.A. Karimova, D.A. |
| citation_txt | Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base / D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, D.A. Karimova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 75-78. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The results of research of photoelectric phenomena in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure are presented. The photo-voltaic effect
observable in a wide range of the spectrum (0.4-2 µm) is explained by different signs of
the photo EMF created by the separation of photocarriers in the energy barrier and from
the levels of intrinsic defects as well as deep impurities of oxygen in the quasineutral
base. A mechanism of photosensitivity of thin base structures with Schottky-Mott’s
barrier under photovoltaic conditions is offered.
|
| first_indexed | 2025-12-07T15:16:56Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118677 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:16:56Z |
| publishDate | 2008 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Yodgorova, D.M. Karimov, A.V. Giyasova, F.A. Karimova, D.A. 2017-05-30T19:24:11Z 2017-05-30T19:24:11Z 2008 Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base / D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, D.A. Karimova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 75-78. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 42.79.Pw, 68.55.Ac https://nasplib.isofts.kiev.ua/handle/123456789/118677 The results of research of photoelectric phenomena in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure are presented. The photo-voltaic effect
 observable in a wide range of the spectrum (0.4-2 µm) is explained by different signs of
 the photo EMF created by the separation of photocarriers in the energy barrier and from
 the levels of intrinsic defects as well as deep impurities of oxygen in the quasineutral
 base. A mechanism of photosensitivity of thin base structures with Schottky-Mott’s
 barrier under photovoltaic conditions is offered. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base Article published earlier |
| spellingShingle | Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base Yodgorova, D.M. Karimov, A.V. Giyasova, F.A. Karimova, D.A. |
| title | Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base |
| title_full | Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base |
| title_fullStr | Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base |
| title_full_unstemmed | Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base |
| title_short | Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base |
| title_sort | research of the photo-voltaic effect in the two-base ag-n⁰algaas-n⁺gaas-n⁰gainas-au structure with various thicknesses of a base |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118677 |
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