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Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base

The results of research of photoelectric phenomena in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure are presented. The photo-voltaic effect observable in a wide range of the spectrum (0.4-2 µm) is explained by different signs of the photo EMF created by the separation of photocarriers in t...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2008
Hauptverfasser: Yodgorova, D.M., Karimov, A.V., Giyasova, F.A., Karimova, D.A.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118677
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base / D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, D.A. Karimova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 75-78. — Бібліогр.: 8 назв. — англ.

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