Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiOx nanostructures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2009
• ISSN: 1560-8034
• Hauptverfasser: Indutnyi, I.Z., Michailovska, K.V., Min’ko, V.I., Shepeliavyi, P.E.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118680
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiOx nanostructures / I.Z. Indutnyi, K.V. Michailovska, V.I. Min’ko, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 105-109. — Бібліогр.: 15 назв. — англ.

The effect of treatment in saturated acetone vapors on the spectral composition
 and intensity of photoluminescence (PL) in porous oblique deposited SiOx films is
 studied. As a result of this treatment followed by high-temperature annealing at the
 temperature 930 °C, considerable PL intensity growth and the small blueshift of PL peak
 position are observed in the porous, column-like structure films containing Si
 nanocrystals. A more intense shortwave band (peak position – 540-560 nm) appears in
 the PL spectrum of these structures, in addition to the longwave band (760-780 nm).
 Both PL bands in treated samples are characterized by monomolecular radiative
 recombination, which can be attributed to annihilation of excitons in silicon nanocrystals
 embedded into oxide matrix (longwave band) and in carbon-enriched matrix near surface
 of oxide nanocolumns (shortwave band). The possibility to control the PL characteristics
 of the porous structures in a wide spectral range by above treatment is shown.