Influence of initial defects on defect formation process in ion doped silicon

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2009
• Hauptverfasser: Smyntyna, V.A., Sviridova, O.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118682
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Influence of initial defects on defect formation process in ion doped silicon / V.A. Smyntyna, O.V. Sviridova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 110-115. — Бібліогр.: 19 назв. — англ.

We study the influence of initial defects in high-resistance epitaxial silicon layers of high-resistance epitaxial silicon structures on defect formation processes at ion boron doping. The method of reverse voltage-capacitance characteristics revealed two maxima of dopant concentration in epitaxial silicon layers ion-doped by boron. Studing the structure of the near-surface area in ion-doped epitaxial silicon by means of modern methods has shown that in the field of the first concentration maximum (the nearest one to a wafer surface), the fine-blocked silicon structure is localised. In the range of the second doping concentration maximum, the grid of dislocations with the variable period within one grid and consisting of 60° dislocations is found out. In the area of dislocation grids, oxygen atoms have been found out. The variable period in the grid is related with a change of mechanical stress and deformation distribution law in the plane of dopant diffusion front as dependent on the presence of initial defects in silicon.