Influence of initial defects on defect formation process in ion doped silicon
We study the influence of initial defects in high-resistance epitaxial silicon layers of high-resistance epitaxial silicon structures on defect formation processes at ion boron doping. The method of reverse voltage-capacitance characteristics revealed two maxima of dopant concentration in epitaxi...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2009 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118682 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of initial defects on defect formation process in ion doped silicon / V.A. Smyntyna, O.V. Sviridova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 110-115. — Бібліогр.: 19 назв. — англ. |
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Smyntyna, V.A. Sviridova, O.V. 2017-05-30T19:38:07Z 2017-05-30T19:38:07Z 2009 Influence of initial defects on defect formation process in ion doped silicon / V.A. Smyntyna, O.V. Sviridova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 110-115. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS 61.72, 73.20.Hb https://nasplib.isofts.kiev.ua/handle/123456789/118682 We study the influence of initial defects in high-resistance epitaxial silicon layers of high-resistance epitaxial silicon structures on defect formation processes at ion boron doping. The method of reverse voltage-capacitance characteristics revealed two maxima of dopant concentration in epitaxial silicon layers ion-doped by boron. Studing the structure of the near-surface area in ion-doped epitaxial silicon by means of modern methods has shown that in the field of the first concentration maximum (the nearest one to a wafer surface), the fine-blocked silicon structure is localised. In the range of the second doping concentration maximum, the grid of dislocations with the variable period within one grid and consisting of 60° dislocations is found out. In the area of dislocation grids, oxygen atoms have been found out. The variable period in the grid is related with a change of mechanical stress and deformation distribution law in the plane of dopant diffusion front as dependent on the presence of initial defects in silicon. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of initial defects on defect formation process in ion doped silicon Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Influence of initial defects on defect formation process in ion doped silicon |
| spellingShingle |
Influence of initial defects on defect formation process in ion doped silicon Smyntyna, V.A. Sviridova, O.V. |
| title_short |
Influence of initial defects on defect formation process in ion doped silicon |
| title_full |
Influence of initial defects on defect formation process in ion doped silicon |
| title_fullStr |
Influence of initial defects on defect formation process in ion doped silicon |
| title_full_unstemmed |
Influence of initial defects on defect formation process in ion doped silicon |
| title_sort |
influence of initial defects on defect formation process in ion doped silicon |
| author |
Smyntyna, V.A. Sviridova, O.V. |
| author_facet |
Smyntyna, V.A. Sviridova, O.V. |
| publishDate |
2009 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
We study the influence of initial defects in high-resistance epitaxial silicon
layers of high-resistance epitaxial silicon structures on defect formation processes at ion
boron doping. The method of reverse voltage-capacitance characteristics revealed two
maxima of dopant concentration in epitaxial silicon layers ion-doped by boron. Studing
the structure of the near-surface area in ion-doped epitaxial silicon by means of modern
methods has shown that in the field of the first concentration maximum (the nearest one
to a wafer surface), the fine-blocked silicon structure is localised. In the range of the
second doping concentration maximum, the grid of dislocations with the variable period
within one grid and consisting of 60° dislocations is found out. In the area of dislocation
grids, oxygen atoms have been found out. The variable period in the grid is related with a
change of mechanical stress and deformation distribution law in the plane of dopant
diffusion front as dependent on the presence of initial defects in silicon.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118682 |
| citation_txt |
Influence of initial defects on defect formation process in ion doped silicon / V.A. Smyntyna, O.V. Sviridova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 110-115. — Бібліогр.: 19 назв. — англ. |
| work_keys_str_mv |
AT smyntynava influenceofinitialdefectsondefectformationprocessiniondopedsilicon AT sviridovaov influenceofinitialdefectsondefectformationprocessiniondopedsilicon |
| first_indexed |
2025-12-07T13:09:59Z |
| last_indexed |
2025-12-07T13:09:59Z |
| _version_ |
1850855128327782400 |