Influence of initial defects on defect formation process in ion doped silicon
We study the influence of initial defects in high-resistance epitaxial silicon
 layers of high-resistance epitaxial silicon structures on defect formation processes at ion
 boron doping. The method of reverse voltage-capacitance characteristics revealed two
 maxima of dopant...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2009 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118682 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of initial defects on defect formation process
 in ion doped silicon / V.A. Smyntyna, O.V. Sviridova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 110-115. — Бібліогр.: 19 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862616713056485376 |
|---|---|
| author | Smyntyna, V.A. Sviridova, O.V. |
| author_facet | Smyntyna, V.A. Sviridova, O.V. |
| citation_txt | Influence of initial defects on defect formation process
 in ion doped silicon / V.A. Smyntyna, O.V. Sviridova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 110-115. — Бібліогр.: 19 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We study the influence of initial defects in high-resistance epitaxial silicon
layers of high-resistance epitaxial silicon structures on defect formation processes at ion
boron doping. The method of reverse voltage-capacitance characteristics revealed two
maxima of dopant concentration in epitaxial silicon layers ion-doped by boron. Studing
the structure of the near-surface area in ion-doped epitaxial silicon by means of modern
methods has shown that in the field of the first concentration maximum (the nearest one
to a wafer surface), the fine-blocked silicon structure is localised. In the range of the
second doping concentration maximum, the grid of dislocations with the variable period
within one grid and consisting of 60° dislocations is found out. In the area of dislocation
grids, oxygen atoms have been found out. The variable period in the grid is related with a
change of mechanical stress and deformation distribution law in the plane of dopant
diffusion front as dependent on the presence of initial defects in silicon.
|
| first_indexed | 2025-12-07T13:09:59Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118682 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:09:59Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Smyntyna, V.A. Sviridova, O.V. 2017-05-30T19:38:07Z 2017-05-30T19:38:07Z 2009 Influence of initial defects on defect formation process
 in ion doped silicon / V.A. Smyntyna, O.V. Sviridova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 110-115. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS 61.72, 73.20.Hb https://nasplib.isofts.kiev.ua/handle/123456789/118682 We study the influence of initial defects in high-resistance epitaxial silicon
 layers of high-resistance epitaxial silicon structures on defect formation processes at ion
 boron doping. The method of reverse voltage-capacitance characteristics revealed two
 maxima of dopant concentration in epitaxial silicon layers ion-doped by boron. Studing
 the structure of the near-surface area in ion-doped epitaxial silicon by means of modern
 methods has shown that in the field of the first concentration maximum (the nearest one
 to a wafer surface), the fine-blocked silicon structure is localised. In the range of the
 second doping concentration maximum, the grid of dislocations with the variable period
 within one grid and consisting of 60° dislocations is found out. In the area of dislocation
 grids, oxygen atoms have been found out. The variable period in the grid is related with a
 change of mechanical stress and deformation distribution law in the plane of dopant
 diffusion front as dependent on the presence of initial defects in silicon. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of initial defects on defect formation process in ion doped silicon Article published earlier |
| spellingShingle | Influence of initial defects on defect formation process in ion doped silicon Smyntyna, V.A. Sviridova, O.V. |
| title | Influence of initial defects on defect formation process in ion doped silicon |
| title_full | Influence of initial defects on defect formation process in ion doped silicon |
| title_fullStr | Influence of initial defects on defect formation process in ion doped silicon |
| title_full_unstemmed | Influence of initial defects on defect formation process in ion doped silicon |
| title_short | Influence of initial defects on defect formation process in ion doped silicon |
| title_sort | influence of initial defects on defect formation process in ion doped silicon |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118682 |
| work_keys_str_mv | AT smyntynava influenceofinitialdefectsondefectformationprocessiniondopedsilicon AT sviridovaov influenceofinitialdefectsondefectformationprocessiniondopedsilicon |