Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2009
• Hauptverfasser: Morozovska, A.N., Svechnikov, G.S., Shishkin, E.I., Shur, V.Y.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118683
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Domain structure formation by using Scanning Probe Microscopy:
 equilibrium polarization distribution and effective piezoelectric
 response calculations / A.N. Morozovska, G.S. Svechnikov, E.I. Shishkin, V.Y. Shur // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 116-124. — Бібліогр.: 23 назв. — англ.

In the paper we adopt the analytical Landau-Ginzburg-Devonshire theory to
 describe the ferroelectric domain structure formation using Scanning Probe Microscopy.
 We calculate the effective local piezoresponse of the domain structure within the
 decoupling approximation using the conventional relation between piezoelectric tensor
 components and the spontaneous polarization vector. The depth profile of the
 polarization distribution was derived from the nonlinear Landau-Ginzburg-Devonshire
 equation. We demonstrate that depending on the material parameters such as the intrinsic
 domain wall width and probe apex geometry, the shape of the nucleating nanodomains
 induced by the probe can be either oblate or prolate. The derived analytical expressions
 for the polarization redistribution caused by the biased probe are valid for both first and
 second order ferroelectrics.