Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations

In the paper we adopt the analytical Landau-Ginzburg-Devonshire theory to describe the ferroelectric domain structure formation using Scanning Probe Microscopy. We calculate the effective local piezoresponse of the domain structure within the decoupling approximation using the conventional relati...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2009
Hauptverfasser: Morozovska, A.N., Svechnikov, G.S., Shishkin, E.I., Shur, V.Y.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118683
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations / A.N. Morozovska, G.S. Svechnikov, E.I. Shishkin, V.Y. Shur // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 116-124. — Бібліогр.: 23 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118683
record_format dspace
spelling Morozovska, A.N.
Svechnikov, G.S.
Shishkin, E.I.
Shur, V.Y.
2017-05-30T19:39:06Z
2017-05-30T19:39:06Z
2009
Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations / A.N. Morozovska, G.S. Svechnikov, E.I. Shishkin, V.Y. Shur // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 116-124. — Бібліогр.: 23 назв. — англ.
1560-8034
PACS 77.80.Fm, 77.22.Ej
https://nasplib.isofts.kiev.ua/handle/123456789/118683
In the paper we adopt the analytical Landau-Ginzburg-Devonshire theory to describe the ferroelectric domain structure formation using Scanning Probe Microscopy. We calculate the effective local piezoresponse of the domain structure within the decoupling approximation using the conventional relation between piezoelectric tensor components and the spontaneous polarization vector. The depth profile of the polarization distribution was derived from the nonlinear Landau-Ginzburg-Devonshire equation. We demonstrate that depending on the material parameters such as the intrinsic domain wall width and probe apex geometry, the shape of the nucleating nanodomains induced by the probe can be either oblate or prolate. The derived analytical expressions for the polarization redistribution caused by the biased probe are valid for both first and second order ferroelectrics.
Authors gratefully acknowledge financial support from National Academy of Science of Ukraine, joint RussianUkrainian grant NASU N 17-Ukr_a (RFBR N 08-02- 90434).
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations
spellingShingle Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations
Morozovska, A.N.
Svechnikov, G.S.
Shishkin, E.I.
Shur, V.Y.
title_short Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations
title_full Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations
title_fullStr Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations
title_full_unstemmed Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations
title_sort domain structure formation by using scanning probe microscopy: equilibrium polarization distribution and effective piezoelectric response calculations
author Morozovska, A.N.
Svechnikov, G.S.
Shishkin, E.I.
Shur, V.Y.
author_facet Morozovska, A.N.
Svechnikov, G.S.
Shishkin, E.I.
Shur, V.Y.
publishDate 2009
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description In the paper we adopt the analytical Landau-Ginzburg-Devonshire theory to describe the ferroelectric domain structure formation using Scanning Probe Microscopy. We calculate the effective local piezoresponse of the domain structure within the decoupling approximation using the conventional relation between piezoelectric tensor components and the spontaneous polarization vector. The depth profile of the polarization distribution was derived from the nonlinear Landau-Ginzburg-Devonshire equation. We demonstrate that depending on the material parameters such as the intrinsic domain wall width and probe apex geometry, the shape of the nucleating nanodomains induced by the probe can be either oblate or prolate. The derived analytical expressions for the polarization redistribution caused by the biased probe are valid for both first and second order ferroelectrics.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118683
citation_txt Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations / A.N. Morozovska, G.S. Svechnikov, E.I. Shishkin, V.Y. Shur // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 116-124. — Бібліогр.: 23 назв. — англ.
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AT shishkinei domainstructureformationbyusingscanningprobemicroscopyequilibriumpolarizationdistributionandeffectivepiezoelectricresponsecalculations
AT shurvy domainstructureformationbyusingscanningprobemicroscopyequilibriumpolarizationdistributionandeffectivepiezoelectricresponsecalculations
first_indexed 2025-12-07T20:35:53Z
last_indexed 2025-12-07T20:35:53Z
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