Electrophysical properties of SmxPb₁₋xTe solid solutions

The electrophysical properties of SmxPb₁₋xTe (x ≤ 0.08) solid solutions have been investigated. The electric conductivity, Hall coefficient and Hall mobility of charge carriers in the temperature range 80 to 800 К have been measured. The mechanism of charge carrier scattering in solid solutions h...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2009
Автор: Hasanov, H.A.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/118688
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Electrophysical properties of SmxPb₁₋xTe solid solutions / H.A. Hasanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 135-137. — Бібліогр.: 5 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118688
record_format dspace
spelling Hasanov, H.A.
2017-05-30T19:43:16Z
2017-05-30T19:43:16Z
2009
Electrophysical properties of SmxPb₁₋xTe solid solutions / H.A. Hasanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 135-137. — Бібліогр.: 5 назв. — англ.
1560-8034
PACS 72.10.Di, 72.20.Dp, My
https://nasplib.isofts.kiev.ua/handle/123456789/118688
The electrophysical properties of SmxPb₁₋xTe (x ≤ 0.08) solid solutions have been investigated. The electric conductivity, Hall coefficient and Hall mobility of charge carriers in the temperature range 80 to 800 К have been measured. The mechanism of charge carrier scattering in solid solutions has been ascertained. It is established that increase of samarium content and simultaneous participation of interacting Sm²⁺ and Sm³⁺ ions in the transfer process lead to decrease in electric conductivity. The change of conductivity type from p- to n-type means that obtained solid solutions are partly compensated semiconductors.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Electrophysical properties of SmxPb₁₋xTe solid solutions
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Electrophysical properties of SmxPb₁₋xTe solid solutions
spellingShingle Electrophysical properties of SmxPb₁₋xTe solid solutions
Hasanov, H.A.
title_short Electrophysical properties of SmxPb₁₋xTe solid solutions
title_full Electrophysical properties of SmxPb₁₋xTe solid solutions
title_fullStr Electrophysical properties of SmxPb₁₋xTe solid solutions
title_full_unstemmed Electrophysical properties of SmxPb₁₋xTe solid solutions
title_sort electrophysical properties of smxpb₁₋xte solid solutions
author Hasanov, H.A.
author_facet Hasanov, H.A.
publishDate 2009
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The electrophysical properties of SmxPb₁₋xTe (x ≤ 0.08) solid solutions have been investigated. The electric conductivity, Hall coefficient and Hall mobility of charge carriers in the temperature range 80 to 800 К have been measured. The mechanism of charge carrier scattering in solid solutions has been ascertained. It is established that increase of samarium content and simultaneous participation of interacting Sm²⁺ and Sm³⁺ ions in the transfer process lead to decrease in electric conductivity. The change of conductivity type from p- to n-type means that obtained solid solutions are partly compensated semiconductors.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118688
citation_txt Electrophysical properties of SmxPb₁₋xTe solid solutions / H.A. Hasanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 135-137. — Бібліогр.: 5 назв. — англ.
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