Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system
A region of glass formation was found during melt quenching from 1273 K in
 the AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂. system. It is localized along the binary GeSe₂-
 GeS₂ system. Characteristic parameters (Tg, Tc, Tm) were determined for the glassy
 alloys, and Tgr and KG w...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2009 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118689 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system / V.V. Halyan, M.V. Shevchuk, G.Ye. Davydyuk, S.V. Voronyuk, A.H. Kevshyn, V.V. Bulatetsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 138-142. — Бібліогр.: 14 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | A region of glass formation was found during melt quenching from 1273 K in
the AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂. system. It is localized along the binary GeSe₂-
GeS₂ system. Characteristic parameters (Tg, Tc, Tm) were determined for the glassy
alloys, and Tgr and KG were calculated using them. The radial distribution functions were
calculated using the integral Fourier transformation based on X-ray scattering curves.
The average interatomic distances within the first and second coordination spheres were
determined.
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| ISSN: | 1560-8034 |