Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system
A region of glass formation was found during melt quenching from 1273 K in the AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂. system. It is localized along the binary GeSe₂- GeS₂ system. Characteristic parameters (Tg, Tc, Tm) were determined for the glassy alloys, and Tgr and KG were calculated using them. T...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2009 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118689 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system / V.V. Halyan, M.V. Shevchuk, G.Ye. Davydyuk, S.V. Voronyuk, A.H. Kevshyn, V.V. Bulatetsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 138-142. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118689 |
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Halyan, V.V. Shevchuk, M.V. Davydyuk, G.Ye. Voronyuk, S.V. Kevshyn, A.H. Bulatetsky, V.V. 2017-05-30T19:46:53Z 2017-05-30T19:46:53Z 2009 Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system / V.V. Halyan, M.V. Shevchuk, G.Ye. Davydyuk, S.V. Voronyuk, A.H. Kevshyn, V.V. Bulatetsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 138-142. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 61.43.Fs https://nasplib.isofts.kiev.ua/handle/123456789/118689 A region of glass formation was found during melt quenching from 1273 K in the AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂. system. It is localized along the binary GeSe₂- GeS₂ system. Characteristic parameters (Tg, Tc, Tm) were determined for the glassy alloys, and Tgr and KG were calculated using them. The radial distribution functions were calculated using the integral Fourier transformation based on X-ray scattering curves. The average interatomic distances within the first and second coordination spheres were determined. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system |
| spellingShingle |
Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system Halyan, V.V. Shevchuk, M.V. Davydyuk, G.Ye. Voronyuk, S.V. Kevshyn, A.H. Bulatetsky, V.V. |
| title_short |
Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system |
| title_full |
Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system |
| title_fullStr |
Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system |
| title_full_unstemmed |
Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system |
| title_sort |
glass formation region and x-ray analysis of the glassy alloys in aggase₂+ges₂<=>aggas₂+gese₂ system |
| author |
Halyan, V.V. Shevchuk, M.V. Davydyuk, G.Ye. Voronyuk, S.V. Kevshyn, A.H. Bulatetsky, V.V. |
| author_facet |
Halyan, V.V. Shevchuk, M.V. Davydyuk, G.Ye. Voronyuk, S.V. Kevshyn, A.H. Bulatetsky, V.V. |
| publishDate |
2009 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
A region of glass formation was found during melt quenching from 1273 K in
the AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂. system. It is localized along the binary GeSe₂-
GeS₂ system. Characteristic parameters (Tg, Tc, Tm) were determined for the glassy
alloys, and Tgr and KG were calculated using them. The radial distribution functions were
calculated using the integral Fourier transformation based on X-ray scattering curves.
The average interatomic distances within the first and second coordination spheres were
determined.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118689 |
| citation_txt |
Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system / V.V. Halyan, M.V. Shevchuk, G.Ye. Davydyuk, S.V. Voronyuk, A.H. Kevshyn, V.V. Bulatetsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 138-142. — Бібліогр.: 14 назв. — англ. |
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