Hydrogenic impurity in a bilayer spherical quantum dot

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2009
• Автори: Boichuk, V.I., Bilynskyi, I.V., Leshko, R.Ya.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118693
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Hydrogenic impurity in a bilayer spherical quantum dot /V.I. Boichuk, I.V. Bilynskyi, R.Ya. Leshko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 155-161. — Бібліогр.: 14 назв. — англ.

In the work, on the basis of the exact solution of the Poisson equation for a bilayer quantum dot with a positively charged donor ion in its centre, determined is the potential energy of interaction of this impurity ion with electron, taking into account different known values of Si and SiO₂ dielectric permittivities. Using the found potential energy, the Schrödinger equation for the hydrogenic impurity in this system is solved exactly. The influence of external and internal radii on the electron spectrum is investigated. Described is the dependence of a squared matrix element for the dipole moment of interlevel transitions on the external and internal radii of the nanoheterosystem