Hydrogenic impurity in a bilayer spherical quantum dot

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2009
• Main Authors: Boichuk, V.I., Bilynskyi, I.V., Leshko, R.Ya.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118693
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Hydrogenic impurity in a bilayer spherical quantum dot /V.I. Boichuk, I.V. Bilynskyi, R.Ya. Leshko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 155-161. — Бібліогр.: 14 назв. — англ.

In the work, on the basis of the exact solution of the Poisson equation for a
 bilayer quantum dot with a positively charged donor ion in its centre, determined is the
 potential energy of interaction of this impurity ion with electron, taking into account
 different known values of Si and SiO₂ dielectric permittivities. Using the found potential
 energy, the Schrödinger equation for the hydrogenic impurity in this system is solved
 exactly. The influence of external and internal radii on the electron spectrum is
 investigated. Described is the dependence of a squared matrix element for the dipole
 moment of interlevel transitions on the external and internal radii of the
 nanoheterosystem