Hydrogenic impurity in a bilayer spherical quantum dot

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2009
• Hauptverfasser: Boichuk, V.I., Bilynskyi, I.V., Leshko, R.Ya.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118693
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Hydrogenic impurity in a bilayer spherical quantum dot /V.I. Boichuk, I.V. Bilynskyi, R.Ya. Leshko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 155-161. — Бібліогр.: 14 назв. — англ.

In the work, on the basis of the exact solution of the Poisson equation for a bilayer quantum dot with a positively charged donor ion in its centre, determined is the potential energy of interaction of this impurity ion with electron, taking into account different known values of Si and SiO₂ diel...