Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2009
• Main Authors: Bourdoucen, H., Zitouni, A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118694
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Data acquisition, parameter extraction and characterization of active
 components using integrated instrumentation system / H. Bourdoucen and A. Zitouni // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 178-186. — Бібліогр.: 17 назв. — англ.

A data acquisition, parameter extraction and characterization system for
 electronic active components is presented in this paper. High sensitivity measuring
 equipments were used for data acquisition and effective extraction models based on
 optimization techniques developed to obtain the parameters of p-n junction diodes,
 Schottky diodes, field effect transistors and bipolar junction transistors. The performance
 of the developed extraction techniques are apparent via comparing experimental data
 with Spice simulated data using the model parameter that is graphically extracted and
 also those extracted using optimization techniques. The performance of the developed
 extraction techniques has been demonstrated by comparing the experimental
 characteristics with Spice simulated curves using default parameters and model
 parameters extracted using graphical and optimization techniques. The relative
 excursions of the simulated I-V characteristics of most investigated devices were less
 than 2.5 % with respect to the experimental curves, which shows the accuracy and
 effectiveness of the developed system. A number of software routines have also been
 implemented under Matlab environment to extract the Spice model parameters for
 different electronic devices.