Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system

A data acquisition, parameter extraction and characterization system for electronic active components is presented in this paper. High sensitivity measuring equipments were used for data acquisition and effective extraction models based on optimization techniques developed to obtain the parameter...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2009
Автори: Bourdoucen, H., Zitouni, A.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/118694
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system / H. Bourdoucen and A. Zitouni // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 178-186. — Бібліогр.: 17 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118694
record_format dspace
spelling Bourdoucen, H.
Zitouni, A.
2017-05-30T19:53:06Z
2017-05-30T19:53:06Z
2009
Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system / H. Bourdoucen and A. Zitouni // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 178-186. — Бібліогр.: 17 назв. — англ.
1560-8034
PACS 85.30.Hi, Kk, Pq, Tv
https://nasplib.isofts.kiev.ua/handle/123456789/118694
A data acquisition, parameter extraction and characterization system for electronic active components is presented in this paper. High sensitivity measuring equipments were used for data acquisition and effective extraction models based on optimization techniques developed to obtain the parameters of p-n junction diodes, Schottky diodes, field effect transistors and bipolar junction transistors. The performance of the developed extraction techniques are apparent via comparing experimental data with Spice simulated data using the model parameter that is graphically extracted and also those extracted using optimization techniques. The performance of the developed extraction techniques has been demonstrated by comparing the experimental characteristics with Spice simulated curves using default parameters and model parameters extracted using graphical and optimization techniques. The relative excursions of the simulated I-V characteristics of most investigated devices were less than 2.5 % with respect to the experimental curves, which shows the accuracy and effectiveness of the developed system. A number of software routines have also been implemented under Matlab environment to extract the Spice model parameters for different electronic devices.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system
spellingShingle Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system
Bourdoucen, H.
Zitouni, A.
title_short Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system
title_full Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system
title_fullStr Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system
title_full_unstemmed Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system
title_sort data acquisition, parameter extraction and characterization of active components using integrated instrumentation system
author Bourdoucen, H.
Zitouni, A.
author_facet Bourdoucen, H.
Zitouni, A.
publishDate 2009
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description A data acquisition, parameter extraction and characterization system for electronic active components is presented in this paper. High sensitivity measuring equipments were used for data acquisition and effective extraction models based on optimization techniques developed to obtain the parameters of p-n junction diodes, Schottky diodes, field effect transistors and bipolar junction transistors. The performance of the developed extraction techniques are apparent via comparing experimental data with Spice simulated data using the model parameter that is graphically extracted and also those extracted using optimization techniques. The performance of the developed extraction techniques has been demonstrated by comparing the experimental characteristics with Spice simulated curves using default parameters and model parameters extracted using graphical and optimization techniques. The relative excursions of the simulated I-V characteristics of most investigated devices were less than 2.5 % with respect to the experimental curves, which shows the accuracy and effectiveness of the developed system. A number of software routines have also been implemented under Matlab environment to extract the Spice model parameters for different electronic devices.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118694
citation_txt Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system / H. Bourdoucen and A. Zitouni // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 178-186. — Бібліогр.: 17 назв. — англ.
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