Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2009
• Main Authors: Donets, V.V., Melnichenko, L.Y., Shaykevich, I.A., Lomakina, O.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118695
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters / V. V. Donets, L.J. Melnichenko, I. A. Shajkevich, O.V. Lomakina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 162-164. — Бібліогр.: 5 назв. — англ.

Offered in this work is the method to determine the thickness and refractive index dispersion of thin antireflection films on absorbing substrates by using a spectral dependence of reflectivity at normal light incidence. The method has been applied to determine the above characteristics of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters. The films were prepared by chemical sedimentation. The obtained experimental data have been treated using a computer program to deduce dispersion curves and thickness values. The results have been interpreted.