Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters
Offered in this work is the method to determine the thickness and refractive index dispersion of thin antireflection films on absorbing substrates by using a spectral dependence of reflectivity at normal light incidence. The method has been applied to determine the above characteristics of thin a...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2009 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118695 |
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| Zitieren: | Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters / V. V. Donets, L.J. Melnichenko, I. A. Shajkevich, O.V. Lomakina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 162-164. — Бібліогр.: 5 назв. — англ. |
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Donets, V.V. Melnichenko, L.Y. Shaykevich, I.A. Lomakina, O.V. 2017-05-30T19:53:51Z 2017-05-30T19:53:51Z 2009 Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters / V. V. Donets, L.J. Melnichenko, I. A. Shajkevich, O.V. Lomakina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 162-164. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS 42.79.Wc, 68.55.jd, 78.20.Ci https://nasplib.isofts.kiev.ua/handle/123456789/118695 Offered in this work is the method to determine the thickness and refractive index dispersion of thin antireflection films on absorbing substrates by using a spectral dependence of reflectivity at normal light incidence. The method has been applied to determine the above characteristics of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters. The films were prepared by chemical sedimentation. The obtained experimental data have been treated using a computer program to deduce dispersion curves and thickness values. The results have been interpreted. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters |
| spellingShingle |
Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters Donets, V.V. Melnichenko, L.Y. Shaykevich, I.A. Lomakina, O.V. |
| title_short |
Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters |
| title_full |
Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters |
| title_fullStr |
Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters |
| title_full_unstemmed |
Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters |
| title_sort |
determination of refractive index dispersion and thickness of thin antireflection films tio₂ and si₃n₄ on surfaces of silicon photoelectric converters |
| author |
Donets, V.V. Melnichenko, L.Y. Shaykevich, I.A. Lomakina, O.V. |
| author_facet |
Donets, V.V. Melnichenko, L.Y. Shaykevich, I.A. Lomakina, O.V. |
| publishDate |
2009 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Offered in this work is the method to determine the thickness and refractive
index dispersion of thin antireflection films on absorbing substrates by using a spectral
dependence of reflectivity at normal light incidence. The method has been applied to
determine the above characteristics of thin antireflection films TiO₂ and Si₃N₄ on
surfaces of silicon photoelectric converters. The films were prepared by chemical
sedimentation. The obtained experimental data have been treated using a computer
program to deduce dispersion curves and thickness values. The results have been
interpreted.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118695 |
| citation_txt |
Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters / V. V. Donets, L.J. Melnichenko, I. A. Shajkevich, O.V. Lomakina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 162-164. — Бібліогр.: 5 назв. — англ. |
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AT donetsvv determinationofrefractiveindexdispersionandthicknessofthinantireflectionfilmstio2andsi3n4onsurfacesofsiliconphotoelectricconverters AT melnichenkoly determinationofrefractiveindexdispersionandthicknessofthinantireflectionfilmstio2andsi3n4onsurfacesofsiliconphotoelectricconverters AT shaykevichia determinationofrefractiveindexdispersionandthicknessofthinantireflectionfilmstio2andsi3n4onsurfacesofsiliconphotoelectricconverters AT lomakinaov determinationofrefractiveindexdispersionandthicknessofthinantireflectionfilmstio2andsi3n4onsurfacesofsiliconphotoelectricconverters |
| first_indexed |
2025-12-07T20:11:30Z |
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2025-12-07T20:11:30Z |
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