Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters
Offered in this work is the method to determine the thickness and refractive
 index dispersion of thin antireflection films on absorbing substrates by using a spectral
 dependence of reflectivity at normal light incidence. The method has been applied to
 determine the above c...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2009 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118695 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters / V. V. Donets, L.J. Melnichenko, I. A. Shajkevich, O.V. Lomakina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 162-164. — Бібліогр.: 5 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862739858894618624 |
|---|---|
| author | Donets, V.V. Melnichenko, L.Y. Shaykevich, I.A. Lomakina, O.V. |
| author_facet | Donets, V.V. Melnichenko, L.Y. Shaykevich, I.A. Lomakina, O.V. |
| citation_txt | Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters / V. V. Donets, L.J. Melnichenko, I. A. Shajkevich, O.V. Lomakina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 162-164. — Бібліогр.: 5 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Offered in this work is the method to determine the thickness and refractive
index dispersion of thin antireflection films on absorbing substrates by using a spectral
dependence of reflectivity at normal light incidence. The method has been applied to
determine the above characteristics of thin antireflection films TiO₂ and Si₃N₄ on
surfaces of silicon photoelectric converters. The films were prepared by chemical
sedimentation. The obtained experimental data have been treated using a computer
program to deduce dispersion curves and thickness values. The results have been
interpreted.
|
| first_indexed | 2025-12-07T20:11:30Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118695 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:11:30Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Donets, V.V. Melnichenko, L.Y. Shaykevich, I.A. Lomakina, O.V. 2017-05-30T19:53:51Z 2017-05-30T19:53:51Z 2009 Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters / V. V. Donets, L.J. Melnichenko, I. A. Shajkevich, O.V. Lomakina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 162-164. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS 42.79.Wc, 68.55.jd, 78.20.Ci https://nasplib.isofts.kiev.ua/handle/123456789/118695 Offered in this work is the method to determine the thickness and refractive
 index dispersion of thin antireflection films on absorbing substrates by using a spectral
 dependence of reflectivity at normal light incidence. The method has been applied to
 determine the above characteristics of thin antireflection films TiO₂ and Si₃N₄ on
 surfaces of silicon photoelectric converters. The films were prepared by chemical
 sedimentation. The obtained experimental data have been treated using a computer
 program to deduce dispersion curves and thickness values. The results have been
 interpreted. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters Article published earlier |
| spellingShingle | Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters Donets, V.V. Melnichenko, L.Y. Shaykevich, I.A. Lomakina, O.V. |
| title | Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters |
| title_full | Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters |
| title_fullStr | Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters |
| title_full_unstemmed | Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters |
| title_short | Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters |
| title_sort | determination of refractive index dispersion and thickness of thin antireflection films tio₂ and si₃n₄ on surfaces of silicon photoelectric converters |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118695 |
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