Biomorphic SiC from peas and beans

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2012
• Автори: Kiselov, V.S., Yukhymchyk, V.A., Poludin, V.I., Tryus, M.P., Belyaev, A.E.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118717
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Biomorphic SiC from peas and beans / V.S. Kiselov, V.A. Yukhymchyk, V.I. Poludin, M.P. Tryus, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 305-309. — Бібліогр.: 18 назв. — англ.

Biomorphic porous SiC ceramics produced by impregnation with liquid or
 vapor silicon of carbon matrices derived from peas (Pisum sativum L.) and beans
 (Phaseolus) precursors were investigated. Optical and scanning electron microscopy was
 used to study the structure of ceramics. It was shown that SiC ceramics made from
 endosperm of peas and beans seeds has inherited the alveolate structure and possesses
 many hierarchical pores with diameters varying between 20 to 100 µm. Raman
 spectroscopy investigations showed that the 3C polytype is formed at a synthesis
 temperature of about 1550 ⁰C, and that both 3C and 6H-SiC are formed at temperatures
 of about 1800 ⁰C. It is shown possibilities of production of ceramic articles of various
 forms from seeds.