Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates
Using the isovalent substitution method, CdSe heterolayers of cubic modification were obtained for the first time on single-crystal CdTe substrates, and their basic physical properties were studied.
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2012 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118719 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates / V.P. Makhniy, М.М. Slyotov, I.V. Tkachenko, А.М. Slyotov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 338-339. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118719 |
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Makhniy, V.P. Slyotov, М.М. Tkachenko, I.V. Slyotov, А.М. 2017-05-31T05:13:52Z 2017-05-31T05:13:52Z 2012 Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates / V.P. Makhniy, М.М. Slyotov, I.V. Tkachenko, А.М. Slyotov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 338-339. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 78.66.-w https://nasplib.isofts.kiev.ua/handle/123456789/118719 Using the isovalent substitution method, CdSe heterolayers of cubic modification were obtained for the first time on single-crystal CdTe substrates, and their basic physical properties were studied. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates |
| spellingShingle |
Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates Makhniy, V.P. Slyotov, М.М. Tkachenko, I.V. Slyotov, А.М. |
| title_short |
Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates |
| title_full |
Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates |
| title_fullStr |
Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates |
| title_full_unstemmed |
Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates |
| title_sort |
properties of cdse heterolayers obtained by isovalent substitution on cdte substrates |
| author |
Makhniy, V.P. Slyotov, М.М. Tkachenko, I.V. Slyotov, А.М. |
| author_facet |
Makhniy, V.P. Slyotov, М.М. Tkachenko, I.V. Slyotov, А.М. |
| publishDate |
2012 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Using the isovalent substitution method, CdSe heterolayers of cubic
modification were obtained for the first time on single-crystal CdTe substrates, and their
basic physical properties were studied.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118719 |
| citation_txt |
Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates / V.P. Makhniy, М.М. Slyotov, I.V. Tkachenko, А.М. Slyotov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 338-339. — Бібліогр.: 6 назв. — англ. |
| work_keys_str_mv |
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| first_indexed |
2025-12-07T13:14:00Z |
| last_indexed |
2025-12-07T13:14:00Z |
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