Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates
Using the isovalent substitution method, CdSe heterolayers of cubic
 modification were obtained for the first time on single-crystal CdTe substrates, and their
 basic physical properties were studied.
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2012 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118719 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates / V.P. Makhniy, М.М. Slyotov, I.V. Tkachenko, А.М. Slyotov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 338-339. — Бібліогр.: 6 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862618518928752640 |
|---|---|
| author | Makhniy, V.P. Slyotov, М.М. Tkachenko, I.V. Slyotov, А.М. |
| author_facet | Makhniy, V.P. Slyotov, М.М. Tkachenko, I.V. Slyotov, А.М. |
| citation_txt | Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates / V.P. Makhniy, М.М. Slyotov, I.V. Tkachenko, А.М. Slyotov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 338-339. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Using the isovalent substitution method, CdSe heterolayers of cubic
modification were obtained for the first time on single-crystal CdTe substrates, and their
basic physical properties were studied.
|
| first_indexed | 2025-12-07T13:14:00Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118719 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:14:00Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Makhniy, V.P. Slyotov, М.М. Tkachenko, I.V. Slyotov, А.М. 2017-05-31T05:13:52Z 2017-05-31T05:13:52Z 2012 Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates / V.P. Makhniy, М.М. Slyotov, I.V. Tkachenko, А.М. Slyotov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 338-339. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 78.66.-w https://nasplib.isofts.kiev.ua/handle/123456789/118719 Using the isovalent substitution method, CdSe heterolayers of cubic
 modification were obtained for the first time on single-crystal CdTe substrates, and their
 basic physical properties were studied. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates Article published earlier |
| spellingShingle | Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates Makhniy, V.P. Slyotov, М.М. Tkachenko, I.V. Slyotov, А.М. |
| title | Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates |
| title_full | Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates |
| title_fullStr | Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates |
| title_full_unstemmed | Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates |
| title_short | Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates |
| title_sort | properties of cdse heterolayers obtained by isovalent substitution on cdte substrates |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118719 |
| work_keys_str_mv | AT makhniyvp propertiesofcdseheterolayersobtainedbyisovalentsubstitutiononcdtesubstrates AT slyotovmm propertiesofcdseheterolayersobtainedbyisovalentsubstitutiononcdtesubstrates AT tkachenkoiv propertiesofcdseheterolayersobtainedbyisovalentsubstitutiononcdtesubstrates AT slyotovam propertiesofcdseheterolayersobtainedbyisovalentsubstitutiononcdtesubstrates |