Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates

Using the isovalent substitution method, CdSe heterolayers of cubic
 modification were obtained for the first time on single-crystal CdTe substrates, and their
 basic physical properties were studied.

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2012
Main Authors: Makhniy, V.P., Slyotov, М.М., Tkachenko, I.V., Slyotov, А.М.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118719
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates / V.P. Makhniy, М.М. Slyotov, I.V. Tkachenko, А.М. Slyotov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 338-339. — Бібліогр.: 6 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Makhniy, V.P.
Slyotov, М.М.
Tkachenko, I.V.
Slyotov, А.М.
author_facet Makhniy, V.P.
Slyotov, М.М.
Tkachenko, I.V.
Slyotov, А.М.
citation_txt Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates / V.P. Makhniy, М.М. Slyotov, I.V. Tkachenko, А.М. Slyotov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 338-339. — Бібліогр.: 6 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Using the isovalent substitution method, CdSe heterolayers of cubic
 modification were obtained for the first time on single-crystal CdTe substrates, and their
 basic physical properties were studied.
first_indexed 2025-12-07T13:14:00Z
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
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language English
last_indexed 2025-12-07T13:14:00Z
publishDate 2012
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Makhniy, V.P.
Slyotov, М.М.
Tkachenko, I.V.
Slyotov, А.М.
2017-05-31T05:13:52Z
2017-05-31T05:13:52Z
2012
Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates / V.P. Makhniy, М.М. Slyotov, I.V. Tkachenko, А.М. Slyotov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 338-339. — Бібліогр.: 6 назв. — англ.
1560-8034
PACS 78.66.-w
https://nasplib.isofts.kiev.ua/handle/123456789/118719
Using the isovalent substitution method, CdSe heterolayers of cubic
 modification were obtained for the first time on single-crystal CdTe substrates, and their
 basic physical properties were studied.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates
Article
published earlier
spellingShingle Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates
Makhniy, V.P.
Slyotov, М.М.
Tkachenko, I.V.
Slyotov, А.М.
title Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates
title_full Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates
title_fullStr Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates
title_full_unstemmed Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates
title_short Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates
title_sort properties of cdse heterolayers obtained by isovalent substitution on cdte substrates
url https://nasplib.isofts.kiev.ua/handle/123456789/118719
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AT tkachenkoiv propertiesofcdseheterolayersobtainedbyisovalentsubstitutiononcdtesubstrates
AT slyotovam propertiesofcdseheterolayersobtainedbyisovalentsubstitutiononcdtesubstrates