Kavetskyy, T., Tsmots, V., & Stepanov, A. (2012). Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements. Semiconductor Physics Quantum Electronics & Optoelectronics.
Чикаго стиль цитування (17-те видання)Kavetskyy, T.S, V.M Tsmots, та A.L Stepanov. "Radiation/annealing-induced Structural Changes in GexAs₄₀-xS₆₀ Glasses as Revealed from High-energy Synchrotron X-ray Diffraction Measurements." Semiconductor Physics Quantum Electronics & Optoelectronics 2012.
Стиль цитування MLA (8-ме видання)Kavetskyy, T.S, et al. "Radiation/annealing-induced Structural Changes in GexAs₄₀-xS₆₀ Glasses as Revealed from High-energy Synchrotron X-ray Diffraction Measurements." Semiconductor Physics Quantum Electronics & Optoelectronics, 2012.