Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements
Local atomic structure of GexAs₄₀-xS₆₀ glasses (x = 16, 24, 32, and 36) has
 been investigated in the -irradiated (2.41 MGy dose) and annealed after irradiation
 states by using the high-energy synchrotron X-ray diffraction technique. The
 accumulated dose of 2.41 MGy is...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2012 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118720 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements / T.S. Kavetskyy, V.M. Tsmots, A.L. Stepanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 310-320. — Бібліогр.: 43 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862555232072892416 |
|---|---|
| author | Kavetskyy, T.S. Tsmots, V.M. Stepanov, A.L. |
| author_facet | Kavetskyy, T.S. Tsmots, V.M. Stepanov, A.L. |
| citation_txt | Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements / T.S. Kavetskyy, V.M. Tsmots, A.L. Stepanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 310-320. — Бібліогр.: 43 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Local atomic structure of GexAs₄₀-xS₆₀ glasses (x = 16, 24, 32, and 36) has
been investigated in the -irradiated (2.41 MGy dose) and annealed after irradiation
states by using the high-energy synchrotron X-ray diffraction technique. The
accumulated dose of 2.41 MGy is chosen to be close to the known in literature focal
point (~2.0 MGy) for the system tested, at which the y-irradiation-induced optical
(darkening) effect does not depend on the composition. It is established that the first
sharp diffraction peak (FSDP) is located at around 1.1 Е - in the structure factors S(Q) of
all the alloys studied. The FSDP position is found to be constant on radiation/annealing
treatment, but the intensity of the FSDP reveals changes under irradiation/annealing only
for the compositions with x = 16 and 24. The radiation/annealing-induced changes are
also observed on the pair distribution functions in the first and second coordination shells
for these compounds. Practically invisible effects on the FSDP and pair distribution
functions are found for the alloys with x = 32 and 36. The radiation/annealing-induced
structural changes detected mainly in the As - S sub-system of the glasses examined are
well explainable within the Tanaka approach for interpretation of the photo-induced
structural changes and related phenomena in As₂S₃ chalcogenide glass and similar
materials
|
| first_indexed | 2025-11-25T22:20:35Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118720 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T22:20:35Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kavetskyy, T.S. Tsmots, V.M. Stepanov, A.L. 2017-05-31T05:15:55Z 2017-05-31T05:15:55Z 2012 Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements / T.S. Kavetskyy, V.M. Tsmots, A.L. Stepanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 310-320. — Бібліогр.: 43 назв. — англ. 1560-8034 PACS 61.05.cp, 61.43.Fs, 61.80.Ed https://nasplib.isofts.kiev.ua/handle/123456789/118720 Local atomic structure of GexAs₄₀-xS₆₀ glasses (x = 16, 24, 32, and 36) has
 been investigated in the -irradiated (2.41 MGy dose) and annealed after irradiation
 states by using the high-energy synchrotron X-ray diffraction technique. The
 accumulated dose of 2.41 MGy is chosen to be close to the known in literature focal
 point (~2.0 MGy) for the system tested, at which the y-irradiation-induced optical
 (darkening) effect does not depend on the composition. It is established that the first
 sharp diffraction peak (FSDP) is located at around 1.1 Е - in the structure factors S(Q) of
 all the alloys studied. The FSDP position is found to be constant on radiation/annealing
 treatment, but the intensity of the FSDP reveals changes under irradiation/annealing only
 for the compositions with x = 16 and 24. The radiation/annealing-induced changes are
 also observed on the pair distribution functions in the first and second coordination shells
 for these compounds. Practically invisible effects on the FSDP and pair distribution
 functions are found for the alloys with x = 32 and 36. The radiation/annealing-induced
 structural changes detected mainly in the As - S sub-system of the glasses examined are
 well explainable within the Tanaka approach for interpretation of the photo-induced
 structural changes and related phenomena in As₂S₃ chalcogenide glass and similar
 materials The authors would like to thank Dr. Ivan Kaban (IFW
 Dresden, Germany) for his help with high-energy
 synchrotron XRD measurements, Dr. Pal Jóvári 
 (Research Institute for Solid State Physics and Optics,
 Budapest, Hungary) for his help with experimental data
 treatment, Prof. Walter Hoyer (Institute of Physics, TU
 Chemnitz, Germany) and Prof. Guorong Chen (East
 China University of Science and Technology, Shanghai,
 China) for stimulating discussions. The investigated
 samples used for measurements were prepared within
 joint research projects (#0106U007386 and
 #0109U007446c) between Ivan Franko Drohobych State
 Pedagogical University (Drohobych, Ukraine) and
 Scientific Research Company “Carat” (Lviv, Ukraine)
 supported by the Ministry of Education and Science of
 Ukraine (#0106U007385 and #0109U007445). T.S.K.
 acknowledges DAAD for support of his research work at
 TU Chemnitz (Germany) and Deutsches ElektronenSynchrotron
 DESY for support of the experiments
 performed at HASYLAB (Hamburg, Germany). T.S.K.
 and V.M.T. acknowledge national project
 (#0111U001021) supported by the Ministry of Education
 and Science, Youth and Sport of Ukraine. A.L.S.
 grateful to the Alexander von Humboldt Foundation,
 DFG and DAAD (Germany). Support from the
 Ukrainian-Russian projects funded by the State Fund for
 Fundamental Researches of Ukraine (#F40.2/019) and
 the Ministry of Education and Science of the Russian
 Federation (#02.740.11.0797) and the Russian
 Foundation for Basic Research (#11-02-90420-Ukraine,
 #11-02-91341-Germany and #12-02-00528-a) is also
 gratefully acknowledged. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements Article published earlier |
| spellingShingle | Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements Kavetskyy, T.S. Tsmots, V.M. Stepanov, A.L. |
| title | Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements |
| title_full | Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements |
| title_fullStr | Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements |
| title_full_unstemmed | Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements |
| title_short | Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements |
| title_sort | radiation/annealing-induced structural changes in gexas₄₀-xs₆₀ glasses as revealed from high-energy synchrotron x-ray diffraction measurements |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118720 |
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