Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements
Local atomic structure of GexAs₄₀-xS₆₀ glasses (x = 16, 24, 32, and 36) has been investigated in the -irradiated (2.41 MGy dose) and annealed after irradiation states by using the high-energy synchrotron X-ray diffraction technique. The accumulated dose of 2.41 MGy is chosen to be close to th...
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| Дата: | 2012 |
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| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118720 |
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| Цитувати: | Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements / T.S. Kavetskyy, V.M. Tsmots, A.L. Stepanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 310-320. — Бібліогр.: 43 назв. — англ. |
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nasplib_isofts_kiev_ua-123456789-1187202025-06-03T16:28:46Z Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements Kavetskyy, T.S. Tsmots, V.M. Stepanov, A.L. Local atomic structure of GexAs₄₀-xS₆₀ glasses (x = 16, 24, 32, and 36) has been investigated in the -irradiated (2.41 MGy dose) and annealed after irradiation states by using the high-energy synchrotron X-ray diffraction technique. The accumulated dose of 2.41 MGy is chosen to be close to the known in literature focal point (~2.0 MGy) for the system tested, at which the y-irradiation-induced optical (darkening) effect does not depend on the composition. It is established that the first sharp diffraction peak (FSDP) is located at around 1.1 Е - in the structure factors S(Q) of all the alloys studied. The FSDP position is found to be constant on radiation/annealing treatment, but the intensity of the FSDP reveals changes under irradiation/annealing only for the compositions with x = 16 and 24. The radiation/annealing-induced changes are also observed on the pair distribution functions in the first and second coordination shells for these compounds. Practically invisible effects on the FSDP and pair distribution functions are found for the alloys with x = 32 and 36. The radiation/annealing-induced structural changes detected mainly in the As - S sub-system of the glasses examined are well explainable within the Tanaka approach for interpretation of the photo-induced structural changes and related phenomena in As₂S₃ chalcogenide glass and similar materials The authors would like to thank Dr. Ivan Kaban (IFW Dresden, Germany) for his help with high-energy synchrotron XRD measurements, Dr. Pal Jóvári (Research Institute for Solid State Physics and Optics, Budapest, Hungary) for his help with experimental data treatment, Prof. Walter Hoyer (Institute of Physics, TU Chemnitz, Germany) and Prof. Guorong Chen (East China University of Science and Technology, Shanghai, China) for stimulating discussions. The investigated samples used for measurements were prepared within joint research projects (#0106U007386 and #0109U007446c) between Ivan Franko Drohobych State Pedagogical University (Drohobych, Ukraine) and Scientific Research Company “Carat” (Lviv, Ukraine) supported by the Ministry of Education and Science of Ukraine (#0106U007385 and #0109U007445). T.S.K. acknowledges DAAD for support of his research work at TU Chemnitz (Germany) and Deutsches ElektronenSynchrotron DESY for support of the experiments performed at HASYLAB (Hamburg, Germany). T.S.K. and V.M.T. acknowledge national project (#0111U001021) supported by the Ministry of Education and Science, Youth and Sport of Ukraine. A.L.S. grateful to the Alexander von Humboldt Foundation, DFG and DAAD (Germany). Support from the Ukrainian-Russian projects funded by the State Fund for Fundamental Researches of Ukraine (#F40.2/019) and the Ministry of Education and Science of the Russian Federation (#02.740.11.0797) and the Russian Foundation for Basic Research (#11-02-90420-Ukraine, #11-02-91341-Germany and #12-02-00528-a) is also gratefully acknowledged. 2012 Article Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements / T.S. Kavetskyy, V.M. Tsmots, A.L. Stepanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 310-320. — Бібліогр.: 43 назв. — англ. 1560-8034 PACS 61.05.cp, 61.43.Fs, 61.80.Ed https://nasplib.isofts.kiev.ua/handle/123456789/118720 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Local atomic structure of GexAs₄₀-xS₆₀ glasses (x = 16, 24, 32, and 36) has
been investigated in the -irradiated (2.41 MGy dose) and annealed after irradiation
states by using the high-energy synchrotron X-ray diffraction technique. The
accumulated dose of 2.41 MGy is chosen to be close to the known in literature focal
point (~2.0 MGy) for the system tested, at which the y-irradiation-induced optical
(darkening) effect does not depend on the composition. It is established that the first
sharp diffraction peak (FSDP) is located at around 1.1 Е - in the structure factors S(Q) of
all the alloys studied. The FSDP position is found to be constant on radiation/annealing
treatment, but the intensity of the FSDP reveals changes under irradiation/annealing only
for the compositions with x = 16 and 24. The radiation/annealing-induced changes are
also observed on the pair distribution functions in the first and second coordination shells
for these compounds. Practically invisible effects on the FSDP and pair distribution
functions are found for the alloys with x = 32 and 36. The radiation/annealing-induced
structural changes detected mainly in the As - S sub-system of the glasses examined are
well explainable within the Tanaka approach for interpretation of the photo-induced
structural changes and related phenomena in As₂S₃ chalcogenide glass and similar
materials |
| format |
Article |
| author |
Kavetskyy, T.S. Tsmots, V.M. Stepanov, A.L. |
| spellingShingle |
Kavetskyy, T.S. Tsmots, V.M. Stepanov, A.L. Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kavetskyy, T.S. Tsmots, V.M. Stepanov, A.L. |
| author_sort |
Kavetskyy, T.S. |
| title |
Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements |
| title_short |
Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements |
| title_full |
Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements |
| title_fullStr |
Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements |
| title_full_unstemmed |
Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements |
| title_sort |
radiation/annealing-induced structural changes in gexas₄₀-xs₆₀ glasses as revealed from high-energy synchrotron x-ray diffraction measurements |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118720 |
| citation_txt |
Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements / T.S. Kavetskyy, V.M. Tsmots, A.L. Stepanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 310-320. — Бібліогр.: 43 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2025-11-25T22:20:35Z |
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2025-11-25T22:20:35Z |
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