Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements
Local atomic structure of GexAs₄₀-xS₆₀ glasses (x = 16, 24, 32, and 36) has
 been investigated in the -irradiated (2.41 MGy dose) and annealed after irradiation
 states by using the high-energy synchrotron X-ray diffraction technique. The
 accumulated dose of 2.41 MGy is...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2012 |
| Main Authors: | Kavetskyy, T.S., Tsmots, V.M., Stepanov, A.L. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118720 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements / T.S. Kavetskyy, V.M. Tsmots, A.L. Stepanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 310-320. — Бібліогр.: 43 назв. — англ. |
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