Photoluminescence studies of CdTe polycrystalline films
Photoluminescence (PL) studies of CdTe polycrystalline films are reported. The films were grown using the modified close space sublimation technique on sapphire substrates. The mean grain size in the investigated films was ranged from 10 up to 360 μm. The distinct spectral bands around 1.580 and...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2012 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118723 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photoluminescence studies of CdTe polycrystalline films / V.V. Tetyorkin, A.V. Sukach, S.V. Stariy and V.A. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 40-44. — Бібліогр.: 28 назв. — англ. |
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Tetyorkin, V.V. Sukach, A.V. Stariy, S.V. Boiko, V.A. 2017-05-31T05:18:38Z 2017-05-31T05:18:38Z 2012 Photoluminescence studies of CdTe polycrystalline films / V.V. Tetyorkin, A.V. Sukach, S.V. Stariy and V.A. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 40-44. — Бібліогр.: 28 назв. — англ. 1560-8034 PACS 78.55.E https://nasplib.isofts.kiev.ua/handle/123456789/118723 Photoluminescence (PL) studies of CdTe polycrystalline films are reported. The films were grown using the modified close space sublimation technique on sapphire substrates. The mean grain size in the investigated films was ranged from 10 up to 360 μm. The distinct spectral bands around 1.580 and 1.440 eV were observed at 77 K. These bands are attributed to shallow bound excitons at dislocations and deep defects, respectively. The intensity of luminescence related to dislocation defects is found to be proportional to the density of grain boundaries. The nature of grain boundaries in the investigated films has been briefly discussed. This work is a part of the research work M310. The authors are grateful to our colleagues F. Sizov and G. Shepelskii for helpful discussions and technical support. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photoluminescence studies of CdTe polycrystalline films Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Photoluminescence studies of CdTe polycrystalline films |
| spellingShingle |
Photoluminescence studies of CdTe polycrystalline films Tetyorkin, V.V. Sukach, A.V. Stariy, S.V. Boiko, V.A. |
| title_short |
Photoluminescence studies of CdTe polycrystalline films |
| title_full |
Photoluminescence studies of CdTe polycrystalline films |
| title_fullStr |
Photoluminescence studies of CdTe polycrystalline films |
| title_full_unstemmed |
Photoluminescence studies of CdTe polycrystalline films |
| title_sort |
photoluminescence studies of cdte polycrystalline films |
| author |
Tetyorkin, V.V. Sukach, A.V. Stariy, S.V. Boiko, V.A. |
| author_facet |
Tetyorkin, V.V. Sukach, A.V. Stariy, S.V. Boiko, V.A. |
| publishDate |
2012 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Photoluminescence (PL) studies of CdTe polycrystalline films are reported.
The films were grown using the modified close space sublimation technique on sapphire
substrates. The mean grain size in the investigated films was ranged from 10 up to
360 μm. The distinct spectral bands around 1.580 and 1.440 eV were observed at 77 K.
These bands are attributed to shallow bound excitons at dislocations and deep defects,
respectively. The intensity of luminescence related to dislocation defects is found to be
proportional to the density of grain boundaries. The nature of grain boundaries in the
investigated films has been briefly discussed.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118723 |
| citation_txt |
Photoluminescence studies of CdTe polycrystalline films / V.V. Tetyorkin, A.V. Sukach, S.V. Stariy and V.A. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 40-44. — Бібліогр.: 28 назв. — англ. |
| work_keys_str_mv |
AT tetyorkinvv photoluminescencestudiesofcdtepolycrystallinefilms AT sukachav photoluminescencestudiesofcdtepolycrystallinefilms AT stariysv photoluminescencestudiesofcdtepolycrystallinefilms AT boikova photoluminescencestudiesofcdtepolycrystallinefilms |
| first_indexed |
2025-12-07T18:39:20Z |
| last_indexed |
2025-12-07T18:39:20Z |
| _version_ |
1850875849928081408 |