Photostimulated etching of germanium chalcogenide films

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2012
• Main Authors: Dan’ko, V.A., Indutnyi, I.Z., Myn’ko, V.I., Shepeliavyi, P.E., Lukyanyuk, M.V., Litvin, O.S.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118724
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Photostimulated etching of germanium chalcogenide films / V.A. Dan’ko, I.Z. Indutnyi, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukyanyuk, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 345-350. — Бібліогр.: 27 назв. — англ.

The new effect of photostimulated dissolution of as-evaporated and annealed
 Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate
 increases with the illumination intensity, and its spectral dependence is correlated with
 absorption in the film at the absorption edge. A possible mechanism for the photoinduced
 etching of ChG films has been discussed. The high-frequency diffraction gratings on
 germanium ChG – more environmentally acceptable compounds than traditionally used
 arsenic chalcogenides – were recorded using the method of interference immersion
 photolithography with photoinduced etching.