Photostimulated etching of germanium chalcogenide films

The new effect of photostimulated dissolution of as-evaporated and annealed
 Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate
 increases with the illumination intensity, and its spectral dependence is correlated with
 absorption in the film...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2012
Main Authors: Dan’ko, V.A., Indutnyi, I.Z., Myn’ko, V.I., Shepeliavyi, P.E., Lukyanyuk, M.V., Litvin, O.S.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118724
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Photostimulated etching of germanium chalcogenide films / V.A. Dan’ko, I.Z. Indutnyi, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukyanyuk, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 345-350. — Бібліогр.: 27 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862629720794857472
author Dan’ko, V.A.
Indutnyi, I.Z.
Myn’ko, V.I.
Shepeliavyi, P.E.
Lukyanyuk, M.V.
Litvin, O.S.
author_facet Dan’ko, V.A.
Indutnyi, I.Z.
Myn’ko, V.I.
Shepeliavyi, P.E.
Lukyanyuk, M.V.
Litvin, O.S.
citation_txt Photostimulated etching of germanium chalcogenide films / V.A. Dan’ko, I.Z. Indutnyi, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukyanyuk, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 345-350. — Бібліогр.: 27 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description The new effect of photostimulated dissolution of as-evaporated and annealed
 Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate
 increases with the illumination intensity, and its spectral dependence is correlated with
 absorption in the film at the absorption edge. A possible mechanism for the photoinduced
 etching of ChG films has been discussed. The high-frequency diffraction gratings on
 germanium ChG – more environmentally acceptable compounds than traditionally used
 arsenic chalcogenides – were recorded using the method of interference immersion
 photolithography with photoinduced etching.
first_indexed 2025-11-30T10:07:09Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-118724
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-11-30T10:07:09Z
publishDate 2012
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Dan’ko, V.A.
Indutnyi, I.Z.
Myn’ko, V.I.
Shepeliavyi, P.E.
Lukyanyuk, M.V.
Litvin, O.S.
2017-05-31T05:19:50Z
2017-05-31T05:19:50Z
2012
Photostimulated etching of germanium chalcogenide films / V.A. Dan’ko, I.Z. Indutnyi, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukyanyuk, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 345-350. — Бібліогр.: 27 назв. — англ.
1560-8034
PACS 81.65.Cf
https://nasplib.isofts.kiev.ua/handle/123456789/118724
The new effect of photostimulated dissolution of as-evaporated and annealed
 Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate
 increases with the illumination intensity, and its spectral dependence is correlated with
 absorption in the film at the absorption edge. A possible mechanism for the photoinduced
 etching of ChG films has been discussed. The high-frequency diffraction gratings on
 germanium ChG – more environmentally acceptable compounds than traditionally used
 arsenic chalcogenides – were recorded using the method of interference immersion
 photolithography with photoinduced etching.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Photostimulated etching of germanium chalcogenide films
Article
published earlier
spellingShingle Photostimulated etching of germanium chalcogenide films
Dan’ko, V.A.
Indutnyi, I.Z.
Myn’ko, V.I.
Shepeliavyi, P.E.
Lukyanyuk, M.V.
Litvin, O.S.
title Photostimulated etching of germanium chalcogenide films
title_full Photostimulated etching of germanium chalcogenide films
title_fullStr Photostimulated etching of germanium chalcogenide films
title_full_unstemmed Photostimulated etching of germanium chalcogenide films
title_short Photostimulated etching of germanium chalcogenide films
title_sort photostimulated etching of germanium chalcogenide films
url https://nasplib.isofts.kiev.ua/handle/123456789/118724
work_keys_str_mv AT dankova photostimulatedetchingofgermaniumchalcogenidefilms
AT indutnyiiz photostimulatedetchingofgermaniumchalcogenidefilms
AT mynkovi photostimulatedetchingofgermaniumchalcogenidefilms
AT shepeliavyipe photostimulatedetchingofgermaniumchalcogenidefilms
AT lukyanyukmv photostimulatedetchingofgermaniumchalcogenidefilms
AT litvinos photostimulatedetchingofgermaniumchalcogenidefilms