Photostimulated etching of germanium chalcogenide films
The new effect of photostimulated dissolution of as-evaporated and annealed Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate increases with the illumination intensity, and its spectral dependence is correlated with absorption in the film at the absorption edge....
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2012 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118724 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Photostimulated etching of germanium chalcogenide films / V.A. Dan’ko, I.Z. Indutnyi, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukyanyuk, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 345-350. — Бібліогр.: 27 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Dan’ko, V.A. Indutnyi, I.Z. Myn’ko, V.I. Shepeliavyi, P.E. Lukyanyuk, M.V. Litvin, O.S. 2017-05-31T05:19:50Z 2017-05-31T05:19:50Z 2012 Photostimulated etching of germanium chalcogenide films / V.A. Dan’ko, I.Z. Indutnyi, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukyanyuk, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 345-350. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 81.65.Cf https://nasplib.isofts.kiev.ua/handle/123456789/118724 The new effect of photostimulated dissolution of as-evaporated and annealed Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate increases with the illumination intensity, and its spectral dependence is correlated with absorption in the film at the absorption edge. A possible mechanism for the photoinduced etching of ChG films has been discussed. The high-frequency diffraction gratings on germanium ChG – more environmentally acceptable compounds than traditionally used arsenic chalcogenides – were recorded using the method of interference immersion photolithography with photoinduced etching. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photostimulated etching of germanium chalcogenide films Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Photostimulated etching of germanium chalcogenide films |
| spellingShingle |
Photostimulated etching of germanium chalcogenide films Dan’ko, V.A. Indutnyi, I.Z. Myn’ko, V.I. Shepeliavyi, P.E. Lukyanyuk, M.V. Litvin, O.S. |
| title_short |
Photostimulated etching of germanium chalcogenide films |
| title_full |
Photostimulated etching of germanium chalcogenide films |
| title_fullStr |
Photostimulated etching of germanium chalcogenide films |
| title_full_unstemmed |
Photostimulated etching of germanium chalcogenide films |
| title_sort |
photostimulated etching of germanium chalcogenide films |
| author |
Dan’ko, V.A. Indutnyi, I.Z. Myn’ko, V.I. Shepeliavyi, P.E. Lukyanyuk, M.V. Litvin, O.S. |
| author_facet |
Dan’ko, V.A. Indutnyi, I.Z. Myn’ko, V.I. Shepeliavyi, P.E. Lukyanyuk, M.V. Litvin, O.S. |
| publishDate |
2012 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The new effect of photostimulated dissolution of as-evaporated and annealed
Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate
increases with the illumination intensity, and its spectral dependence is correlated with
absorption in the film at the absorption edge. A possible mechanism for the photoinduced
etching of ChG films has been discussed. The high-frequency diffraction gratings on
germanium ChG – more environmentally acceptable compounds than traditionally used
arsenic chalcogenides – were recorded using the method of interference immersion
photolithography with photoinduced etching.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118724 |
| citation_txt |
Photostimulated etching of germanium chalcogenide films / V.A. Dan’ko, I.Z. Indutnyi, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukyanyuk, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 345-350. — Бібліогр.: 27 назв. — англ. |
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| first_indexed |
2025-11-30T10:07:09Z |
| last_indexed |
2025-11-30T10:07:09Z |
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