Photostimulated etching of germanium chalcogenide films
The new effect of photostimulated dissolution of as-evaporated and annealed
 Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate
 increases with the illumination intensity, and its spectral dependence is correlated with
 absorption in the film...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2012 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118724 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photostimulated etching of germanium chalcogenide films / V.A. Dan’ko, I.Z. Indutnyi, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukyanyuk, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 345-350. — Бібліогр.: 27 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862629720794857472 |
|---|---|
| author | Dan’ko, V.A. Indutnyi, I.Z. Myn’ko, V.I. Shepeliavyi, P.E. Lukyanyuk, M.V. Litvin, O.S. |
| author_facet | Dan’ko, V.A. Indutnyi, I.Z. Myn’ko, V.I. Shepeliavyi, P.E. Lukyanyuk, M.V. Litvin, O.S. |
| citation_txt | Photostimulated etching of germanium chalcogenide films / V.A. Dan’ko, I.Z. Indutnyi, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukyanyuk, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 345-350. — Бібліогр.: 27 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The new effect of photostimulated dissolution of as-evaporated and annealed
Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate
increases with the illumination intensity, and its spectral dependence is correlated with
absorption in the film at the absorption edge. A possible mechanism for the photoinduced
etching of ChG films has been discussed. The high-frequency diffraction gratings on
germanium ChG – more environmentally acceptable compounds than traditionally used
arsenic chalcogenides – were recorded using the method of interference immersion
photolithography with photoinduced etching.
|
| first_indexed | 2025-11-30T10:07:09Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118724 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T10:07:09Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Dan’ko, V.A. Indutnyi, I.Z. Myn’ko, V.I. Shepeliavyi, P.E. Lukyanyuk, M.V. Litvin, O.S. 2017-05-31T05:19:50Z 2017-05-31T05:19:50Z 2012 Photostimulated etching of germanium chalcogenide films / V.A. Dan’ko, I.Z. Indutnyi, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukyanyuk, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 345-350. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 81.65.Cf https://nasplib.isofts.kiev.ua/handle/123456789/118724 The new effect of photostimulated dissolution of as-evaporated and annealed
 Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate
 increases with the illumination intensity, and its spectral dependence is correlated with
 absorption in the film at the absorption edge. A possible mechanism for the photoinduced
 etching of ChG films has been discussed. The high-frequency diffraction gratings on
 germanium ChG – more environmentally acceptable compounds than traditionally used
 arsenic chalcogenides – were recorded using the method of interference immersion
 photolithography with photoinduced etching. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photostimulated etching of germanium chalcogenide films Article published earlier |
| spellingShingle | Photostimulated etching of germanium chalcogenide films Dan’ko, V.A. Indutnyi, I.Z. Myn’ko, V.I. Shepeliavyi, P.E. Lukyanyuk, M.V. Litvin, O.S. |
| title | Photostimulated etching of germanium chalcogenide films |
| title_full | Photostimulated etching of germanium chalcogenide films |
| title_fullStr | Photostimulated etching of germanium chalcogenide films |
| title_full_unstemmed | Photostimulated etching of germanium chalcogenide films |
| title_short | Photostimulated etching of germanium chalcogenide films |
| title_sort | photostimulated etching of germanium chalcogenide films |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118724 |
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