Photostimulated etching of germanium chalcogenide films

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2012
• Hauptverfasser: Dan’ko, V.A., Indutnyi, I.Z., Myn’ko, V.I., Shepeliavyi, P.E., Lukyanyuk, M.V., Litvin, O.S.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118724
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Photostimulated etching of germanium chalcogenide films / V.A. Dan’ko, I.Z. Indutnyi, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukyanyuk, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 345-350. — Бібліогр.: 27 назв. — англ.

The new effect of photostimulated dissolution of as-evaporated and annealed Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate increases with the illumination intensity, and its spectral dependence is correlated with absorption in the film at the absorption edge....