Sachenko, A., Belyaev, A., Boltovets, N., Zhilyaev, Y., Kapitanchuk, L., Klad’ko, V., . . . Sheremet, V. (2012). Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density. Semiconductor Physics Quantum Electronics & Optoelectronics.
Чикаго стиль цитування (17-те видання)Sachenko, A.V, et al. "Investigation of Resistance Formation Mechanisms for Contacts to N-AlN and N-GaN with a High Dislocation Density." Semiconductor Physics Quantum Electronics & Optoelectronics 2012.
Стиль цитування MLA (8-ме видання)Sachenko, A.V, et al. "Investigation of Resistance Formation Mechanisms for Contacts to N-AlN and N-GaN with a High Dislocation Density." Semiconductor Physics Quantum Electronics & Optoelectronics, 2012.
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