Sachenko, A., Belyaev, A., Boltovets, N., Zhilyaev, Y., Kapitanchuk, L., Klad’ko, V., . . . Sheremet, V. (2012). Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago Style (17th ed.) CitationSachenko, A.V, et al. "Investigation of Resistance Formation Mechanisms for Contacts to N-AlN and N-GaN with a High Dislocation Density." Semiconductor Physics Quantum Electronics & Optoelectronics 2012.
MLA (8th ed.) CitationSachenko, A.V, et al. "Investigation of Resistance Formation Mechanisms for Contacts to N-AlN and N-GaN with a High Dislocation Density." Semiconductor Physics Quantum Electronics & Optoelectronics, 2012.
Warning: These citations may not always be 100% accurate.