Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2012
• Hauptverfasser: Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Zhilyaev, Yu.V., Kapitanchuk, L.M., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Naumov, A.V., Panteleev, V.V., Sheremet, V.N.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118725
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, Yu.V. Zhilyaev, L.M. Kapitanchuk, V.P. Klad’ko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Kuchuk, A.V. Naumov, V.V. Panteleev, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 351-357. — Бібліогр.: 19 назв. — англ.

We studied temperature dependences of the resistivity, Pc(T) , of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n - GaN and n - AlN with a high dislocation density. BothPc(T) curves have portions of exponential decrease, as well as those with very slight Pc(T) dependence at higher temp...