X-ray dosimetry of copper-doped CdGa₂S₄ single crystals
Comparative analysis of the X-ray dosimetric characteristics of CdGa₂S₄ and CdGa₂S₄<Cu> single crystals demonstrates that after copper-doping the persistence of the crystal characteristics completely disappears. The current-dose characteristics Ir ~ E tend to linearity (α = 1) at low dos...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2012 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118727 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | X-ray dosimetry of copper-doped CdGa₂S₄ single crystals / S.N. Mustafaeva, M.M. Asadov, D.T. Guseinov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 358-359. — Бібліогр.: 4 назв. — англ. |
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Mustafaeva, S.N. Asadov, M.M. Guseinov, D.T. 2017-05-31T05:23:35Z 2017-05-31T05:23:35Z 2012 X-ray dosimetry of copper-doped CdGa₂S₄ single crystals / S.N. Mustafaeva, M.M. Asadov, D.T. Guseinov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 358-359. — Бібліогр.: 4 назв. — англ. 1560-8034 https://nasplib.isofts.kiev.ua/handle/123456789/118727 PACS 71.20.Nr, 72.15.Cz, 72.20.Jv, 72.80.Jc Comparative analysis of the X-ray dosimetric characteristics of CdGa₂S₄ and CdGa₂S₄<Cu> single crystals demonstrates that after copper-doping the persistence of the crystal characteristics completely disappears. The current-dose characteristics Ir ~ E tend to linearity (α = 1) at low dose rates of X-rays. At high dose rates, α tends to 0.5, which testifies to the mechanism of quadratic recombination of charge carriers generated by X-rays in CdGa₂S₄<Cu>. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics X-ray dosimetry of copper-doped CdGa₂S₄ single crystals Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
X-ray dosimetry of copper-doped CdGa₂S₄ single crystals |
| spellingShingle |
X-ray dosimetry of copper-doped CdGa₂S₄ single crystals Mustafaeva, S.N. Asadov, M.M. Guseinov, D.T. |
| title_short |
X-ray dosimetry of copper-doped CdGa₂S₄ single crystals |
| title_full |
X-ray dosimetry of copper-doped CdGa₂S₄ single crystals |
| title_fullStr |
X-ray dosimetry of copper-doped CdGa₂S₄ single crystals |
| title_full_unstemmed |
X-ray dosimetry of copper-doped CdGa₂S₄ single crystals |
| title_sort |
x-ray dosimetry of copper-doped cdga₂s₄ single crystals |
| author |
Mustafaeva, S.N. Asadov, M.M. Guseinov, D.T. |
| author_facet |
Mustafaeva, S.N. Asadov, M.M. Guseinov, D.T. |
| publishDate |
2012 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Comparative analysis of the X-ray dosimetric characteristics of CdGa₂S₄ and
CdGa₂S₄<Cu> single crystals demonstrates that after copper-doping the persistence of the
crystal characteristics completely disappears. The current-dose characteristics Ir ~ E
tend to linearity (α = 1) at low dose rates of X-rays. At high dose rates, α tends to 0.5,
which testifies to the mechanism of quadratic recombination of charge carriers generated
by X-rays in CdGa₂S₄<Cu>.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118727 |
| citation_txt |
X-ray dosimetry of copper-doped CdGa₂S₄ single crystals / S.N. Mustafaeva, M.M. Asadov, D.T. Guseinov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 358-359. — Бібліогр.: 4 назв. — англ. |
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| first_indexed |
2025-12-07T15:41:16Z |
| last_indexed |
2025-12-07T15:41:16Z |
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1850864646079119360 |