A theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots

. Using the variational method in real space and the effective-mass theory, we present quite an advanced semi-analytic approach susceptible for calculating the binding energy Eb of Wannier excitons in semiconductor quantum dot structures with rectangular and parabolic shapes of the confining pote...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2012
Автори: Taqi, A., Diouri, J.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/118728
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:A theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots / A. Taqi, J. Diouri // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 365-369. — Бібліогр.: 9 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118728
record_format dspace
spelling Taqi, A.
Diouri, J.
2017-05-31T05:24:17Z
2017-05-31T05:24:17Z
2012
A theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots / A. Taqi, J. Diouri // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 365-369. — Бібліогр.: 9 назв. — англ.
1560-8034
PACS 71.35.-y; 73.21.Fg, La
https://nasplib.isofts.kiev.ua/handle/123456789/118728
. Using the variational method in real space and the effective-mass theory, we present quite an advanced semi-analytic approach susceptible for calculating the binding energy Eb of Wannier excitons in semiconductor quantum dot structures with rectangular and parabolic shapes of the confining potential in the so-called strong-confinement regime. Illustration is given for CdS, ZnSe, CdSe, GaAs structures of crystallites for both rectangular and parabolic quantum dots, and it displays a very good agreement between the experimental and theoretical results reported in literature.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
A theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title A theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots
spellingShingle A theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots
Taqi, A.
Diouri, J.
title_short A theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots
title_full A theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots
title_fullStr A theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots
title_full_unstemmed A theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots
title_sort theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots
author Taqi, A.
Diouri, J.
author_facet Taqi, A.
Diouri, J.
publishDate 2012
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description . Using the variational method in real space and the effective-mass theory, we present quite an advanced semi-analytic approach susceptible for calculating the binding energy Eb of Wannier excitons in semiconductor quantum dot structures with rectangular and parabolic shapes of the confining potential in the so-called strong-confinement regime. Illustration is given for CdS, ZnSe, CdSe, GaAs structures of crystallites for both rectangular and parabolic quantum dots, and it displays a very good agreement between the experimental and theoretical results reported in literature.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118728
citation_txt A theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots / A. Taqi, J. Diouri // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 365-369. — Бібліогр.: 9 назв. — англ.
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