The study of solar cells with back side contacts at low illumination

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2010
• Автори: Gorban, A.P., Kostylyov, V.P., Litovchenko, V.G., Sachenko, A.V., Serba, A.A., Sokolovskyi, I.O., Chernenko, V.V.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118734
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: The study of solar cells with back side contacts at low illumination / A.P. Gorban, V.P. Kostylyov, V.G. Litovchenko, A.V. Sachenko, A.A. Serba, I.O. Sokolovskyi, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 348-352. — Бібліогр.: 7 назв. — англ.

Theoretical analysis and experimental research of Si solar cells (SC) with
 interdigitated back side contacts (BSC) photovoltaic parameters and photoconversion
 efficiency at low light level have been done in presence of floating p⁺-n junctions and
 isotype n⁺-n junctions on frontal (illuminated) surface. It has been found that in case
 of floating junction the magnitudes of short-circuit current, open-circuit voltage and
 efficiency, as well as of internal quantum efficiency of photocurrent can decrease
 significantly due to recombination in the space charge region (SCR) rather than to
 surface recombination. In case of isotype junction, this decrease is absent. These results
 allow to conclude that the floating p⁺-n junctions at the front surface of the silicon
 BSC SC would be appropriate for use only in case of an illumination intensity ≥ 1000 W/m².