The study of solar cells with back side contacts at low illumination
Theoretical analysis and experimental research of Si solar cells (SC) with
 interdigitated back side contacts (BSC) photovoltaic parameters and photoconversion
 efficiency at low light level have been done in presence of floating p⁺-n junctions and
 isotype n⁺-n junctions on...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2010 |
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118734 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The study of solar cells with back side contacts at low illumination / A.P. Gorban, V.P. Kostylyov, V.G. Litovchenko, A.V. Sachenko, A.A. Serba, I.O. Sokolovskyi, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 348-352. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862700105961832448 |
|---|---|
| author | Gorban, A.P. Kostylyov, V.P. Litovchenko, V.G. Sachenko, A.V. Serba, A.A. Sokolovskyi, I.O. Chernenko, V.V. |
| author_facet | Gorban, A.P. Kostylyov, V.P. Litovchenko, V.G. Sachenko, A.V. Serba, A.A. Sokolovskyi, I.O. Chernenko, V.V. |
| citation_txt | The study of solar cells with back side contacts at low illumination / A.P. Gorban, V.P. Kostylyov, V.G. Litovchenko, A.V. Sachenko, A.A. Serba, I.O. Sokolovskyi, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 348-352. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Theoretical analysis and experimental research of Si solar cells (SC) with
interdigitated back side contacts (BSC) photovoltaic parameters and photoconversion
efficiency at low light level have been done in presence of floating p⁺-n junctions and
isotype n⁺-n junctions on frontal (illuminated) surface. It has been found that in case
of floating junction the magnitudes of short-circuit current, open-circuit voltage and
efficiency, as well as of internal quantum efficiency of photocurrent can decrease
significantly due to recombination in the space charge region (SCR) rather than to
surface recombination. In case of isotype junction, this decrease is absent. These results
allow to conclude that the floating p⁺-n junctions at the front surface of the silicon
BSC SC would be appropriate for use only in case of an illumination intensity ≥ 1000 W/m².
|
| first_indexed | 2025-12-07T16:37:52Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118734 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:37:52Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gorban, A.P. Kostylyov, V.P. Litovchenko, V.G. Sachenko, A.V. Serba, A.A. Sokolovskyi, I.O. Chernenko, V.V. 2017-05-31T05:28:44Z 2017-05-31T05:28:44Z 2010 The study of solar cells with back side contacts at low illumination / A.P. Gorban, V.P. Kostylyov, V.G. Litovchenko, A.V. Sachenko, A.A. Serba, I.O. Sokolovskyi, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 348-352. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 72.20.Jv, 88.40.hj, jj https://nasplib.isofts.kiev.ua/handle/123456789/118734 Theoretical analysis and experimental research of Si solar cells (SC) with
 interdigitated back side contacts (BSC) photovoltaic parameters and photoconversion
 efficiency at low light level have been done in presence of floating p⁺-n junctions and
 isotype n⁺-n junctions on frontal (illuminated) surface. It has been found that in case
 of floating junction the magnitudes of short-circuit current, open-circuit voltage and
 efficiency, as well as of internal quantum efficiency of photocurrent can decrease
 significantly due to recombination in the space charge region (SCR) rather than to
 surface recombination. In case of isotype junction, this decrease is absent. These results
 allow to conclude that the floating p⁺-n junctions at the front surface of the silicon
 BSC SC would be appropriate for use only in case of an illumination intensity ≥ 1000 W/m². en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The study of solar cells with back side contacts at low illumination Article published earlier |
| spellingShingle | The study of solar cells with back side contacts at low illumination Gorban, A.P. Kostylyov, V.P. Litovchenko, V.G. Sachenko, A.V. Serba, A.A. Sokolovskyi, I.O. Chernenko, V.V. |
| title | The study of solar cells with back side contacts at low illumination |
| title_full | The study of solar cells with back side contacts at low illumination |
| title_fullStr | The study of solar cells with back side contacts at low illumination |
| title_full_unstemmed | The study of solar cells with back side contacts at low illumination |
| title_short | The study of solar cells with back side contacts at low illumination |
| title_sort | study of solar cells with back side contacts at low illumination |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118734 |
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