Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts
We investigated temperature dependence of contact resistance of an Au−Ti−Pd₂Si ohmic contact to heavily doped n⁺ -Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In this case, the limiting process is diffusion input of electrons to the metal sh...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2010 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118737 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 436-438. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | We investigated temperature dependence of contact resistance of an
Au−Ti−Pd₂Si ohmic contact to heavily doped n⁺
-Si. The contact resistance increases with
temperature owing to conduction through the metal shunts. In this case, the limiting
process is diffusion input of electrons to the metal shunts. The proposed mechanism of
contact resistance formation seems to realize also in the case of wide-gap semiconductors
with high concentration of surface states and dislocation density in the contact.
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| ISSN: | 1560-8034 |