Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts
We investigated temperature dependence of contact resistance of an
 Au−Ti−Pd₂Si ohmic contact to heavily doped n⁺
 -Si. The contact resistance increases with
 temperature owing to conduction through the metal shunts. In this case, the limiting
 process is diffusion in...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2010 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118737 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 436-438. — Бібліогр.: 7 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | We investigated temperature dependence of contact resistance of an
Au−Ti−Pd₂Si ohmic contact to heavily doped n⁺
-Si. The contact resistance increases with
temperature owing to conduction through the metal shunts. In this case, the limiting
process is diffusion input of electrons to the metal shunts. The proposed mechanism of
contact resistance formation seems to realize also in the case of wide-gap semiconductors
with high concentration of surface states and dislocation density in the contact.
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| ISSN: | 1560-8034 |