Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts
We investigated temperature dependence of contact resistance of an
 Au−Ti−Pd₂Si ohmic contact to heavily doped n⁺
 -Si. The contact resistance increases with
 temperature owing to conduction through the metal shunts. In this case, the limiting
 process is diffusion in...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2010 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118737 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 436-438. — Бібліогр.: 7 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862590821544493056 |
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| author | Belyaev, A.E. Boltovets, N.S. Konakova, R.V. Kudryk, Ya.Ya. Sachenko, A.V. Sheremet, V.N. |
| author_facet | Belyaev, A.E. Boltovets, N.S. Konakova, R.V. Kudryk, Ya.Ya. Sachenko, A.V. Sheremet, V.N. |
| citation_txt | Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 436-438. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We investigated temperature dependence of contact resistance of an
Au−Ti−Pd₂Si ohmic contact to heavily doped n⁺
-Si. The contact resistance increases with
temperature owing to conduction through the metal shunts. In this case, the limiting
process is diffusion input of electrons to the metal shunts. The proposed mechanism of
contact resistance formation seems to realize also in the case of wide-gap semiconductors
with high concentration of surface states and dislocation density in the contact.
|
| first_indexed | 2025-11-27T05:43:04Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118737 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-27T05:43:04Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Belyaev, A.E. Boltovets, N.S. Konakova, R.V. Kudryk, Ya.Ya. Sachenko, A.V. Sheremet, V.N. 2017-05-31T05:33:30Z 2017-05-31T05:33:30Z 2010 Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 436-438. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 73.40.Cg, 73.40.Ns, 85.30.-z https://nasplib.isofts.kiev.ua/handle/123456789/118737 We investigated temperature dependence of contact resistance of an
 Au−Ti−Pd₂Si ohmic contact to heavily doped n⁺
 -Si. The contact resistance increases with
 temperature owing to conduction through the metal shunts. In this case, the limiting
 process is diffusion input of electrons to the metal shunts. The proposed mechanism of
 contact resistance formation seems to realize also in the case of wide-gap semiconductors
 with high concentration of surface states and dislocation density in the contact. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts Article published earlier |
| spellingShingle | Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts Belyaev, A.E. Boltovets, N.S. Konakova, R.V. Kudryk, Ya.Ya. Sachenko, A.V. Sheremet, V.N. |
| title | Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts |
| title_full | Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts |
| title_fullStr | Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts |
| title_full_unstemmed | Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts |
| title_short | Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts |
| title_sort | temperature dependence of contact resistance of au−ti−pd2si−n⁺ -si ohmic contacts |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118737 |
| work_keys_str_mv | AT belyaevae temperaturedependenceofcontactresistanceofautipd2sinsiohmiccontacts AT boltovetsns temperaturedependenceofcontactresistanceofautipd2sinsiohmiccontacts AT konakovarv temperaturedependenceofcontactresistanceofautipd2sinsiohmiccontacts AT kudrykyaya temperaturedependenceofcontactresistanceofautipd2sinsiohmiccontacts AT sachenkoav temperaturedependenceofcontactresistanceofautipd2sinsiohmiccontacts AT sheremetvn temperaturedependenceofcontactresistanceofautipd2sinsiohmiccontacts |