Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2010
• Main Authors: Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V., Sheremet, V.N.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118737
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 436-438. — Бібліогр.: 7 назв. — англ.

We investigated temperature dependence of contact resistance of an Au−Ti−Pd₂Si ohmic contact to heavily doped n⁺ -Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In this case, the limiting process is diffusion input of electrons to the metal sh...