Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure
Using the method of deposition over the optical contact, the authors created nSnS2/n-CdIn₂Te₄ heterojunction and investigated temperature evolution of its currentvoltage characteristics under the forward bias U ≤ 3 V. Analyzing temperature dependence of the curves obtained, the main mechanisms of...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2010 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118739 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure / P.M. Gorley, Z.M. Grushka, O.G. Grushka, P.P. Gorley, I.I. Zabolotsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 444-447. — Бібліогр.: 14 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Gorley, P.M. Grushka, Z.M. Grushka, O.G. Gorley, P.P. Zabolotsky, I.I. 2017-05-31T05:35:56Z 2017-05-31T05:35:56Z 2010 Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure / P.M. Gorley, Z.M. Grushka, O.G. Grushka, P.P. Gorley, I.I. Zabolotsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 444-447. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 73.40.Cg, Gk, Lq https://nasplib.isofts.kiev.ua/handle/123456789/118739 Using the method of deposition over the optical contact, the authors created nSnS2/n-CdIn₂Te₄ heterojunction and investigated temperature evolution of its currentvoltage characteristics under the forward bias U ≤ 3 V. Analyzing temperature dependence of the curves obtained, the main mechanisms of current transport through the semiconductor contact were determined, allowing prediction of successful possible applications of the heterojunction studied under high temperatures and elevated radiation due to the parameters of the base semiconductors and the diode structure itself. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure |
| spellingShingle |
Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure Gorley, P.M. Grushka, Z.M. Grushka, O.G. Gorley, P.P. Zabolotsky, I.I. |
| title_short |
Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure |
| title_full |
Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure |
| title_fullStr |
Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure |
| title_full_unstemmed |
Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure |
| title_sort |
electrical properties of n-sns₂/n-cdin₂te₄ heterostructure |
| author |
Gorley, P.M. Grushka, Z.M. Grushka, O.G. Gorley, P.P. Zabolotsky, I.I. |
| author_facet |
Gorley, P.M. Grushka, Z.M. Grushka, O.G. Gorley, P.P. Zabolotsky, I.I. |
| publishDate |
2010 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Using the method of deposition over the optical contact, the authors created nSnS2/n-CdIn₂Te₄
heterojunction and investigated temperature evolution of its currentvoltage
characteristics under the forward bias U ≤ 3 V. Analyzing temperature
dependence of the curves obtained, the main mechanisms of current transport through the
semiconductor contact were determined, allowing prediction of successful possible
applications of the heterojunction studied under high temperatures and elevated radiation
due to the parameters of the base semiconductors and the diode structure itself.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118739 |
| citation_txt |
Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure / P.M. Gorley, Z.M. Grushka, O.G. Grushka, P.P. Gorley, I.I. Zabolotsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 444-447. — Бібліогр.: 14 назв. — англ. |
| work_keys_str_mv |
AT gorleypm electricalpropertiesofnsns2ncdin2te4heterostructure AT grushkazm electricalpropertiesofnsns2ncdin2te4heterostructure AT grushkaog electricalpropertiesofnsns2ncdin2te4heterostructure AT gorleypp electricalpropertiesofnsns2ncdin2te4heterostructure AT zabolotskyii electricalpropertiesofnsns2ncdin2te4heterostructure |
| first_indexed |
2025-12-07T15:35:40Z |
| last_indexed |
2025-12-07T15:35:40Z |
| _version_ |
1850864293699911680 |