Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2010
• Main Authors: Gorley, P.M., Grushka, Z.M., Grushka, O.G., Gorley, P.P., Zabolotsky, I.I.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118739
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure / P.M. Gorley, Z.M. Grushka, O.G. Grushka, P.P. Gorley, I.I. Zabolotsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 444-447. — Бібліогр.: 14 назв. — англ.

Using the method of deposition over the optical contact, the authors created nSnS2/n-CdIn₂Te₄ heterojunction and investigated temperature evolution of its currentvoltage characteristics under the forward bias U ≤ 3 V. Analyzing temperature dependence of the curves obtained, the main mechanisms of...