Surface and electron structure of the 6H-SiC(0001)-(3×3) surface and ultrathin Ag films on Si(111) and Si(001)
Surface topographic (LEED, STM) and spectroscopic (ARUPS, XPS, STS) studies have been performed on the Si-terminated 6H-SiC(0001)-(3×3) surface and Ag superstructures and ultrathin films on Si(001) and Si(111) surfaces, using a scanning tunneling microscope (STM) in ultrahigh vacuum. Our results con...
Gespeichert in:
| Veröffentlicht in: | Физика низких температур |
|---|---|
| Datum: | 2011 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2011
|
| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118774 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Surface and electron structure of the 6H-SiC(0001)-(3×3) surface and ultrathin Ag films on Si(111) and Si(001) / V.A. Gasparov // Физика низких температур. — 2011. — Т. 37, № 9-10. — С. 1073–1084. — Бібліогр.: 23 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118774 |
|---|---|
| record_format |
dspace |
| spelling |
Gasparov, V.A. 2017-05-31T07:34:45Z 2017-05-31T07:34:45Z 2011 Surface and electron structure of the 6H-SiC(0001)-(3×3) surface and ultrathin Ag films on Si(111) and Si(001) / V.A. Gasparov // Физика низких температур. — 2011. — Т. 37, № 9-10. — С. 1073–1084. — Бібліогр.: 23 назв. — англ. 0132-6414 PACS: 62.23.Eg, 68.35.B–, 68.37.Ef, 73.40.–c https://nasplib.isofts.kiev.ua/handle/123456789/118774 Surface topographic (LEED, STM) and spectroscopic (ARUPS, XPS, STS) studies have been performed on the Si-terminated 6H-SiC(0001)-(3×3) surface and Ag superstructures and ultrathin films on Si(001) and Si(111) surfaces, using a scanning tunneling microscope (STM) in ultrahigh vacuum. Our results confirm that a 2D epitaxial metal growth is favored on Si(001) at low temperatures and a solid, two-domain Ag(111) film has been achieved at coverage’s as low as 10 ML. We have found that the films reveal a morphology with 3-dimensional features and with well defined honeycomb structure in between. An atomically flat Si(111)/Ag-(√3̅×√3̅)R30° surface has been modified by use of a scanning tunneling microscope (STM) in ultrahigh vacuum (UHV). High quality 6H-SiC(0001)-(3×3) and Si(111)-Ag(√3̅×√3̅)R30° over structures have been prepared and studied by means of ARUPS, XPS and LEED. The local density of states proportional to the normalized differential conductivity (dI / dV )/(I / V ) vs V spectra show a distinct bands of empty (–0.6 eV) and filled (0.65 eV) sites separated by 1.2 eV, for both areas. The results support a Mott–Hubbard-type model as used for the calculation of the density of states of 6H-SiC(0001)-(3×3) surface with Hubbard gap 1 eV. I wish to thank Wo. Richter for hospitality during stay in FSU-Jena and cooperation, M. Riehl-Chudoba and B. Schröter, for providing invaluable assistance, F. Bechstedt, R.M. Feenstra, M. Grioni, L.S.O. Johansson, G. Margaritondo, W.-D. Schneider and J.-M. Themlin, for helpful discussions. This work has been supported by the DFG grants [No. RI 650/4–1, No. 436RUS 113/112/D, SFB 196], the Russian Foundation of Basic Research grants [No. 96–02–17532], the Russian Scientific Program: Surface Atomic Structures [Grants No. 95–2.1, No. 4.10.99], RAS Program: New Materials and Structures (Grant 4.13 and B.7) and the Russian State Program of support of leading scientific schools (1160.2008.2). en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Тонкие пленки Surface and electron structure of the 6H-SiC(0001)-(3×3) surface and ultrathin Ag films on Si(111) and Si(001) Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Surface and electron structure of the 6H-SiC(0001)-(3×3) surface and ultrathin Ag films on Si(111) and Si(001) |
| spellingShingle |
Surface and electron structure of the 6H-SiC(0001)-(3×3) surface and ultrathin Ag films on Si(111) and Si(001) Gasparov, V.A. Тонкие пленки |
| title_short |
Surface and electron structure of the 6H-SiC(0001)-(3×3) surface and ultrathin Ag films on Si(111) and Si(001) |
| title_full |
Surface and electron structure of the 6H-SiC(0001)-(3×3) surface and ultrathin Ag films on Si(111) and Si(001) |
| title_fullStr |
Surface and electron structure of the 6H-SiC(0001)-(3×3) surface and ultrathin Ag films on Si(111) and Si(001) |
| title_full_unstemmed |
Surface and electron structure of the 6H-SiC(0001)-(3×3) surface and ultrathin Ag films on Si(111) and Si(001) |
| title_sort |
surface and electron structure of the 6h-sic(0001)-(3×3) surface and ultrathin ag films on si(111) and si(001) |
| author |
Gasparov, V.A. |
| author_facet |
Gasparov, V.A. |
| topic |
Тонкие пленки |
| topic_facet |
Тонкие пленки |
| publishDate |
2011 |
| language |
English |
| container_title |
Физика низких температур |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| format |
Article |
| description |
Surface topographic (LEED, STM) and spectroscopic (ARUPS, XPS, STS) studies have been performed on the Si-terminated 6H-SiC(0001)-(3×3) surface and Ag superstructures and ultrathin films on Si(001) and Si(111) surfaces, using a scanning tunneling microscope (STM) in ultrahigh vacuum. Our results confirm that a 2D epitaxial metal growth is favored on Si(001) at low temperatures and a solid, two-domain Ag(111) film has been achieved at coverage’s as low as 10 ML. We have found that the films reveal a morphology with 3-dimensional features and with well defined honeycomb structure in between. An atomically flat Si(111)/Ag-(√3̅×√3̅)R30° surface has been modified by use of a scanning tunneling microscope (STM) in ultrahigh vacuum (UHV). High quality 6H-SiC(0001)-(3×3) and Si(111)-Ag(√3̅×√3̅)R30° over structures have been prepared and studied by means of ARUPS, XPS and LEED. The local density of states proportional to the normalized differential conductivity (dI / dV )/(I / V ) vs V spectra show a distinct bands of empty (–0.6 eV) and filled (0.65 eV) sites separated by 1.2 eV, for both areas. The results support a Mott–Hubbard-type model as used for the calculation of the density of states of 6H-SiC(0001)-(3×3) surface with Hubbard gap 1 eV.
|
| issn |
0132-6414 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118774 |
| citation_txt |
Surface and electron structure of the 6H-SiC(0001)-(3×3) surface and ultrathin Ag films on Si(111) and Si(001) / V.A. Gasparov // Физика низких температур. — 2011. — Т. 37, № 9-10. — С. 1073–1084. — Бібліогр.: 23 назв. — англ. |
| work_keys_str_mv |
AT gasparovva surfaceandelectronstructureofthe6hsic000133surfaceandultrathinagfilmsonsi111andsi001 |
| first_indexed |
2025-12-07T17:41:22Z |
| last_indexed |
2025-12-07T17:41:22Z |
| _version_ |
1850872202715463680 |