The impact of heavy Ga doping on superconductivity in germanium
We report new experimental results on how superconductivity in gallium-doped germanium (Ge:Ga) is influenced by hole concentration and microstructure. Ion implantation and subsequent flash-lamp annealing at various temperatures have been utilized to prepare highly p-doped thin films consisting of na...
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| Veröffentlicht in: | Физика низких температур |
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| Datum: | 2011 |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2011
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The impact of heavy Ga doping on superconductivity in germanium / R. Skrotzki, T. Herrmannsdörfer, V. Heera, J. Fiedler, A. Mücklich, M. Helm, J. Wosnitza // Физика низких температур. — 2011. — Т. 37, № 9-10. — С. 1098–1106. — Бібліогр.: 44 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862569406706483200 |
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| author | Skrotzki, R. Herrmannsdörfer, T. Heera, V. Fiedler, J. Mücklich, A. Helm, M. Wosnitza, J. |
| author_facet | Skrotzki, R. Herrmannsdörfer, T. Heera, V. Fiedler, J. Mücklich, A. Helm, M. Wosnitza, J. |
| citation_txt | The impact of heavy Ga doping on superconductivity in germanium / R. Skrotzki, T. Herrmannsdörfer, V. Heera, J. Fiedler, A. Mücklich, M. Helm, J. Wosnitza // Физика низких температур. — 2011. — Т. 37, № 9-10. — С. 1098–1106. — Бібліогр.: 44 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | We report new experimental results on how superconductivity in gallium-doped germanium (Ge:Ga) is influenced by hole concentration and microstructure. Ion implantation and subsequent flash-lamp annealing at various temperatures have been utilized to prepare highly p-doped thin films consisting of nanocrystalline and epitaxially grown sublayers with Ga-peak concentrations of up to 8 at.%. Successive structural investigations were carried out by means of Rutherford-backscattering spectrometry in combination with ion channelling, secondaryion-mass spectrometry, and high-resolution cross-sectional transmission electron microscopy. Hole densities of 1.8·10²⁰ to 5.3·10²⁰ cm⁻³ (0.4 to 1.2 at.%) were estimated via Hall-effect measurements revealing that only a fraction of the incorporated gallium has been activated electrically to generate free charge carriers. The coincidence of a sufficiently high hole and Ga concentration is required for the formation of a superconducting condensate. Our data reflect a critical hole concentration of around 0.4 at.%. Higher concentrations lead to an increase of Tc from 0.24 to 0.43 K as characterized by electrical-transport measurements. A short mean-free path indicates superconductivity in the dirty limit. In addition, small critical-current densities of max. 20 kA/m² point to a large impact of the microstructure.
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| first_indexed | 2025-11-26T01:42:45Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-118783 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-11-26T01:42:45Z |
| publishDate | 2011 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
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| spelling | Skrotzki, R. Herrmannsdörfer, T. Heera, V. Fiedler, J. Mücklich, A. Helm, M. Wosnitza, J. 2017-05-31T08:38:50Z 2017-05-31T08:38:50Z 2011 The impact of heavy Ga doping on superconductivity in germanium / R. Skrotzki, T. Herrmannsdörfer, V. Heera, J. Fiedler, A. Mücklich, M. Helm, J. Wosnitza // Физика низких температур. — 2011. — Т. 37, № 9-10. — С. 1098–1106. — Бібліогр.: 44 назв. — англ. 0132-6414 PACS: 74.10.+v, 74.78.–w https://nasplib.isofts.kiev.ua/handle/123456789/118783 We report new experimental results on how superconductivity in gallium-doped germanium (Ge:Ga) is influenced by hole concentration and microstructure. Ion implantation and subsequent flash-lamp annealing at various temperatures have been utilized to prepare highly p-doped thin films consisting of nanocrystalline and epitaxially grown sublayers with Ga-peak concentrations of up to 8 at.%. Successive structural investigations were carried out by means of Rutherford-backscattering spectrometry in combination with ion channelling, secondaryion-mass spectrometry, and high-resolution cross-sectional transmission electron microscopy. Hole densities of 1.8·10²⁰ to 5.3·10²⁰ cm⁻³ (0.4 to 1.2 at.%) were estimated via Hall-effect measurements revealing that only a fraction of the incorporated gallium has been activated electrically to generate free charge carriers. The coincidence of a sufficiently high hole and Ga concentration is required for the formation of a superconducting condensate. Our data reflect a critical hole concentration of around 0.4 at.%. Higher concentrations lead to an increase of Tc from 0.24 to 0.43 K as characterized by electrical-transport measurements. A short mean-free path indicates superconductivity in the dirty limit. In addition, small critical-current densities of max. 20 kA/m² point to a large impact of the microstructure. We acknowledge the support of F. Arnold, K.-H. Heinig, H. Hortenbach, M. Posselt, B. Schmidt, W. Skorupa, S. Teichert, M. Voelskow, and C. Wündisch for technical assistance and helpful discussion. Part of this work was supported by Deutsche Forschungsgemeinschaft under Contract No. HE 2604/7 and by EuroMagNET II under EU contract No. 228043. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Сверхпроводимость и сверхтекучесть The impact of heavy Ga doping on superconductivity in germanium Article published earlier |
| spellingShingle | The impact of heavy Ga doping on superconductivity in germanium Skrotzki, R. Herrmannsdörfer, T. Heera, V. Fiedler, J. Mücklich, A. Helm, M. Wosnitza, J. Сверхпроводимость и сверхтекучесть |
| title | The impact of heavy Ga doping on superconductivity in germanium |
| title_full | The impact of heavy Ga doping on superconductivity in germanium |
| title_fullStr | The impact of heavy Ga doping on superconductivity in germanium |
| title_full_unstemmed | The impact of heavy Ga doping on superconductivity in germanium |
| title_short | The impact of heavy Ga doping on superconductivity in germanium |
| title_sort | impact of heavy ga doping on superconductivity in germanium |
| topic | Сверхпроводимость и сверхтекучесть |
| topic_facet | Сверхпроводимость и сверхтекучесть |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118783 |
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