Gaidar, G. (2009). On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors. Semiconductor Physics Quantum Electronics & Optoelectronics.
Чикаго стиль цитування (17-те видання)Gaidar, G.P. "On Methodology of Measuring Parameters with the Increased Sensitivity to Residual or Irradiation Induced Inhomogeneities in Semiconductors." Semiconductor Physics Quantum Electronics & Optoelectronics 2009.
Стиль цитування MLA (8-ме видання)Gaidar, G.P. "On Methodology of Measuring Parameters with the Increased Sensitivity to Residual or Irradiation Induced Inhomogeneities in Semiconductors." Semiconductor Physics Quantum Electronics & Optoelectronics, 2009.
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