On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2009
• Main Author: Gaidar, G.P.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118830
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 324-327. — Бібліогр.: 7 назв. — англ.

Within the frame of theory of anisotropic scattering, it was studied the relation of values for specific resistance changes under the axial elastic deformations for manyvalley semiconductors, n-Ge and n-Si. The aspect ratio between values of the saturated specific resistance ρX (∞)strain for strain and analogous value for axial pressure deformation ρX (∞)pressure was determined. It gives a possibility to obtain reliable information concerning the value ρX (∞)strain even for the case when mobility of carriers and, consequently, the value ρ = ρ(Х) are significantly decreased, for example, under irradiation treatment of crystals.