On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors
Within the frame of theory of anisotropic scattering, it was studied the relation of values for specific resistance changes under the axial elastic deformations for manyvalley semiconductors, n-Ge and n-Si. The aspect ratio between values of the saturated specific resistance ρX (∞)strain for s...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2009 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118830 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 324-327. — Бібліогр.: 7 назв. — англ. |
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Gaidar, G.P. 2017-05-31T18:43:44Z 2017-05-31T18:43:44Z 2009 On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 324-327. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 73.20.Mf, 78.67.Bf https://nasplib.isofts.kiev.ua/handle/123456789/118830 Within the frame of theory of anisotropic scattering, it was studied the relation of values for specific resistance changes under the axial elastic deformations for manyvalley semiconductors, n-Ge and n-Si. The aspect ratio between values of the saturated specific resistance ρX (∞)strain for strain and analogous value for axial pressure deformation ρX (∞)pressure was determined. It gives a possibility to obtain reliable information concerning the value ρX (∞)strain even for the case when mobility of carriers and, consequently, the value ρ = ρ(Х) are significantly decreased, for example, under irradiation treatment of crystals. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors |
| spellingShingle |
On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors Gaidar, G.P. |
| title_short |
On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors |
| title_full |
On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors |
| title_fullStr |
On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors |
| title_full_unstemmed |
On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors |
| title_sort |
on methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors |
| author |
Gaidar, G.P. |
| author_facet |
Gaidar, G.P. |
| publishDate |
2009 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Within the frame of theory of anisotropic scattering, it was studied the relation
of values for specific resistance changes under the axial elastic deformations for manyvalley
semiconductors, n-Ge and n-Si. The aspect ratio between values of the saturated
specific resistance ρX (∞)strain for strain and analogous value for axial pressure
deformation ρX (∞)pressure was determined. It gives a possibility to obtain reliable
information concerning the value ρX (∞)strain even for the case when mobility of carriers
and, consequently, the value ρ = ρ(Х) are significantly decreased, for example, under
irradiation treatment of crystals.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118830 |
| citation_txt |
On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 324-327. — Бібліогр.: 7 назв. — англ. |
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2025-12-07T15:47:31Z |
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2025-12-07T15:47:31Z |
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