On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors
Within the frame of theory of anisotropic scattering, it was studied the relation
 of values for specific resistance changes under the axial elastic deformations for manyvalley
 semiconductors, n-Ge and n-Si. The aspect ratio between values of the saturated
 specific resis...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2009 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118830 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | On methodology of measuring parameters with the increased
 sensitivity to residual or irradiation induced inhomogeneities
 in semiconductors / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 324-327. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862680659304120320 |
|---|---|
| author | Gaidar, G.P. |
| author_facet | Gaidar, G.P. |
| citation_txt | On methodology of measuring parameters with the increased
 sensitivity to residual or irradiation induced inhomogeneities
 in semiconductors / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 324-327. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Within the frame of theory of anisotropic scattering, it was studied the relation
of values for specific resistance changes under the axial elastic deformations for manyvalley
semiconductors, n-Ge and n-Si. The aspect ratio between values of the saturated
specific resistance ρX (∞)strain for strain and analogous value for axial pressure
deformation ρX (∞)pressure was determined. It gives a possibility to obtain reliable
information concerning the value ρX (∞)strain even for the case when mobility of carriers
and, consequently, the value ρ = ρ(Х) are significantly decreased, for example, under
irradiation treatment of crystals.
|
| first_indexed | 2025-12-07T15:47:31Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118830 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:47:31Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gaidar, G.P. 2017-05-31T18:43:44Z 2017-05-31T18:43:44Z 2009 On methodology of measuring parameters with the increased
 sensitivity to residual or irradiation induced inhomogeneities
 in semiconductors / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 324-327. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 73.20.Mf, 78.67.Bf https://nasplib.isofts.kiev.ua/handle/123456789/118830 Within the frame of theory of anisotropic scattering, it was studied the relation
 of values for specific resistance changes under the axial elastic deformations for manyvalley
 semiconductors, n-Ge and n-Si. The aspect ratio between values of the saturated
 specific resistance ρX (∞)strain for strain and analogous value for axial pressure
 deformation ρX (∞)pressure was determined. It gives a possibility to obtain reliable
 information concerning the value ρX (∞)strain even for the case when mobility of carriers
 and, consequently, the value ρ = ρ(Х) are significantly decreased, for example, under
 irradiation treatment of crystals. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors Article published earlier |
| spellingShingle | On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors Gaidar, G.P. |
| title | On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors |
| title_full | On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors |
| title_fullStr | On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors |
| title_full_unstemmed | On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors |
| title_short | On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors |
| title_sort | on methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118830 |
| work_keys_str_mv | AT gaidargp onmethodologyofmeasuringparameterswiththeincreasedsensitivitytoresidualorirradiationinducedinhomogeneitiesinsemiconductors |