On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors
Within the frame of theory of anisotropic scattering, it was studied the relation
 of values for specific resistance changes under the axial elastic deformations for manyvalley
 semiconductors, n-Ge and n-Si. The aspect ratio between values of the saturated
 specific resis...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2009 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118830 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | On methodology of measuring parameters with the increased
 sensitivity to residual or irradiation induced inhomogeneities
 in semiconductors / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 324-327. — Бібліогр.: 7 назв. — англ. |