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On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors

Within the frame of theory of anisotropic scattering, it was studied the relation of values for specific resistance changes under the axial elastic deformations for manyvalley semiconductors, n-Ge and n-Si. The aspect ratio between values of the saturated specific resis...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2009
1. Verfasser:	Gaidar, G.P.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/118830
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 324-327. — Бібліогр.: 7 назв. — англ.

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