Comparison of electron transport in polar materials for the models of low-density and high-density electron gas. Application to bulk GaN
We analyzed the steady-state electron transport for bulk GaN in frame of two opposite approaches: the electron temperature approach that assumes a high-density electron gas and numerical single-particle Monte-Carlo method that assumes a lowdensity electron gas and does not take into account el...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2009 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118831 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Comparison of electron transport in polar materials for the models of low-density and high-density electron gas. Application to bulk GaN / V.V. Korotyeyev, G.I. Syngayivska, V.A. Kochelap and A.A. Klimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 328-338. — Бібліогр.: 21 назв. — англ. |