Comparison of electron transport in polar materials for the models of low-density and high-density electron gas. Application to bulk GaN

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2009
• Main Authors: Korotyeyev, V.V., Syngayivska, G.I., Kochelap, V.A., Klimov, A.A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118831
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Comparison of electron transport in polar materials
 for the models of low-density and high-density electron gas.
 Application to bulk GaN / V.V. Korotyeyev, G.I. Syngayivska, V.A. Kochelap and A.A. Klimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 328-338. — Бібліогр.: 21 назв. — англ.

We analyzed the steady-state electron transport for bulk GaN in frame of two
 opposite approaches: the electron temperature approach that assumes a high-density
 electron gas and numerical single-particle Monte-Carlo method that assumes a lowdensity
 electron gas and does...