A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2009
• Hauptverfasser: Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118832
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: A new method of extraction of a p-n diode series resistance
 from I-V characteristics and its application to analysis
 of low-temperature conduction of the diode base / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 339-342. — Бібліогр.: 14 назв. — англ.

A new analytical method of extraction of a diode series resistance from
 current-voltage characteristics is proposed which takes into account dependence of the
 series resistance on voltage (or current). The method supposes a presence of linear
 section in the diode current-voltage characteristic plotted in semi-logarithmic scale. This
 method is applied here to experimental data for silicon diode in which series resistance is
 caused by freezing-out free current carriers into impurities at cryogenic temperatures.
 Character of dependence of the base resistance on electric field in the base layer
 determined in such way confirms hopping nature of silicon conduction under these
 conditions.