A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base
A new analytical method of extraction of a diode series resistance from
 current-voltage characteristics is proposed which takes into account dependence of the
 series resistance on voltage (or current). The method supposes a presence of linear
 section in the diode current-v...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2009 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118832 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | A new method of extraction of a p-n diode series resistance
 from I-V characteristics and its application to analysis
 of low-temperature conduction of the diode base / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 339-342. — Бібліогр.: 14 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862679519697043456 |
|---|---|
| author | Borblik, V.L. Shwarts, Yu.M. Shwarts, M.M. |
| author_facet | Borblik, V.L. Shwarts, Yu.M. Shwarts, M.M. |
| citation_txt | A new method of extraction of a p-n diode series resistance
 from I-V characteristics and its application to analysis
 of low-temperature conduction of the diode base / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 339-342. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A new analytical method of extraction of a diode series resistance from
current-voltage characteristics is proposed which takes into account dependence of the
series resistance on voltage (or current). The method supposes a presence of linear
section in the diode current-voltage characteristic plotted in semi-logarithmic scale. This
method is applied here to experimental data for silicon diode in which series resistance is
caused by freezing-out free current carriers into impurities at cryogenic temperatures.
Character of dependence of the base resistance on electric field in the base layer
determined in such way confirms hopping nature of silicon conduction under these
conditions.
|
| first_indexed | 2025-12-07T15:43:41Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118832 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:43:41Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Borblik, V.L. Shwarts, Yu.M. Shwarts, M.M. 2017-05-31T18:47:28Z 2017-05-31T18:47:28Z 2009 A new method of extraction of a p-n diode series resistance
 from I-V characteristics and its application to analysis
 of low-temperature conduction of the diode base / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 339-342. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 71.30.+h, 72.20.Ee, 85.30.Kk https://nasplib.isofts.kiev.ua/handle/123456789/118832 A new analytical method of extraction of a diode series resistance from
 current-voltage characteristics is proposed which takes into account dependence of the
 series resistance on voltage (or current). The method supposes a presence of linear
 section in the diode current-voltage characteristic plotted in semi-logarithmic scale. This
 method is applied here to experimental data for silicon diode in which series resistance is
 caused by freezing-out free current carriers into impurities at cryogenic temperatures.
 Character of dependence of the base resistance on electric field in the base layer
 determined in such way confirms hopping nature of silicon conduction under these
 conditions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base Article published earlier |
| spellingShingle | A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base Borblik, V.L. Shwarts, Yu.M. Shwarts, M.M. |
| title | A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base |
| title_full | A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base |
| title_fullStr | A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base |
| title_full_unstemmed | A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base |
| title_short | A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base |
| title_sort | new method of extraction of a p-n diode series resistance from i-v characteristics and its application to analysis of low-temperature conduction of the diode base |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118832 |
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