A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2009
• Hauptverfasser: Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118832
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 339-342. — Бібліогр.: 14 назв. — англ.

A new analytical method of extraction of a diode series resistance from current-voltage characteristics is proposed which takes into account dependence of the series resistance on voltage (or current). The method supposes a presence of linear section in the diode current-voltage characteristic pl...