The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors
Studied in this work is the Rahman-Nat diffraction on a thin grating of
 refractive index in semiconductor, which was created by an interference pattern of two
 coherent laser beams. Numeral calculations showed that the maximal diffraction
 efficiency for the Rahman-Nat diffr...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2009 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118833 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The Rahman-Nat diffraction on a thin laser-induced grating
 of the refractive index in semiconductors/ O.Yu. Semchuk, О.І. Gichan, L.G. Grechko// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 343-348. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Studied in this work is the Rahman-Nat diffraction on a thin grating of
refractive index in semiconductor, which was created by an interference pattern of two
coherent laser beams. Numeral calculations showed that the maximal diffraction
efficiency for the Rahman-Nat diffraction in the first order was 28.2 % for a purely phase
grating at its thickness z ~ 200, and 4.8 % for a purely amplitude grating. It was also
ascertained, that waves belonging to the nearby diffraction orders differ from each other
by π/2 in their phase.
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| ISSN: | 1560-8034 |